Reactive Ion Beam Etch of GaInAsP/InP Multilayer and Removal of Damaged Layer by Two-Step Etch
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概要
- 論文の詳細を見る
Reactive ion beam etching (RIBE) is studied as a method to form a tiny reflector and microstructure for vertical cavity surface emitting lasers, Appropriate etching conditions with a chlorine gas for GaInAsP, InP, and GaAs have been obtained using RIBE. Microsized circular mesas including GaInAsP/InP multilayers with vertical side walls were fabricated. RIBE-induced damages in InP substrates were estimated to be localized within a depth of 〜1000Å from the surface by capacitance-voltage (C-V) measurement. In addition, the removal of the induced damage by the second RIBE with different conditions for the InP wafer was proposed.
- 社団法人応用物理学会の論文
- 1991-09-15
著者
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Koyama Fumio
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Koyama Fumio
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
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Arai M
Microsystem Research Center P&i Laboratories Tokyo Institute Of Technology
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Iga Kenichi
Precision & Intelligence Lab., Tokyo Institute of Technology
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Matsutani A
Microsystem Research Center Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Matsutani Akihiro
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Koyama Fumio
Precision And Intelligence Laboratory Microsystem Research Center Tokyo Institute Of Technology
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