Highly Beryllium-Doped and Lattice-Matched GaInAsP/InP Growth by Chemical Beam Epitaxy (CBE)
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概要
- 論文の詳細を見る
Highly Be-doped (>10^<19> cm^<-3>) 1.45 μm-wavelength GaInAsP was grown by chemical beam epitaxy with a solid Be source. The hole concentration for both GaInAsP and InP was linearly related to the Be effusion cell temperature. In spite of high doping levels, neither obvious lattice mismatch nor surface degradation was observed. A stripe contact laser was also successfully fabricated using the results obtained.
- 社団法人応用物理学会の論文
- 1990-03-20
著者
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Koyama Fumio
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
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Uchida T
Hiroshima Univ. Graduate School Of Biomedical Sci. Hiroshima Jpn
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Iga Kenichi
Research Laboratory Of Precision Machinery And Electronics
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UCHIDA Takashi
Research Laboratory of Precision Machinery and Electronics, Tokyo Institute of Technology
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UCHIDA Toshi
Research Laboratory of Precision Machinery and Electronics, Tokyo Institute of Technology
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MISE Kazuaki
Research Laboratory of Precision Machinery and Electronics, Tokyo Institute of Technology
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Mise K
Hiroshima Univ. Higashi‐hiroshima Jpn
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