Spray Selective Etch Process for Short-Cavity Fabrication of GaAs/GaAlAs Surface Emitting Laser
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概要
- 論文の詳細を見る
We have improved the fabrication process forming the shortcavity structure for GaAs/GAlAs vertical cavity surface emitting lasers. A complete flat epitaxial surface for the output side mirror was obtained by selectively removing the GaAs substrate using a spray wet etch. We present some results on surface characterization.
- 社団法人応用物理学会の論文
- 1992-03-15
著者
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Koyama Fumio
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Koyama Fumio
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
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Iga Kenichi
Precision & Intelligence Lab., Tokyo Institute of Technology
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Uchida T
Hiroshima Univ. Graduate School Of Biomedical Sci. Hiroshima Jpn
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TANOBE Hiromasa
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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TAMANUKI Takemasa
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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UCHIDA Toshikazu
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Koyama Fumio
Precision And Intelligence Laboratory Microsystem Research Center Tokyo Institute Of Technology
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Tanobe Hiromasa
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Tamanuki Takemasa
Networking Research Laboratories Nec Corporation:(present Address)interintelligence Inc.
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