Koyama Fumio | Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
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概要
- 同名の論文著者
- Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technologyの論文著者
関連著者
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Koyama Fumio
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
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Iga Kenichi
Precision & Intelligence Lab., Tokyo Institute of Technology
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Miyamoto Takanori
Ntt Interdisciplinary Research Laboratories
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Arai M
Microsystem Research Center P&i Laboratories Tokyo Institute Of Technology
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Koyama Fumio
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Koyama Fumio
Microsystem Research Center P&i Lab. Tokyo Institute Of Technology
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Koyama Fumio
Microsystem Research Center, P&I Lab., Tokyo Institute of Technology
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Iga K
Microsystem Research Center P & I Lab . Tokyo Institute Of Technology
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Miura Toru
Microsystem Research Center P&i Laboratory Tokyo Institute Of Technology
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MIYAMOTO Tomoyuki
Microsystem Research Center, Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Azuchi Munechika
Microsystem Research Center Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Inoue K
Technol. Res. Inst. Osaka Prefecture Osaka Jpn
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Iga K
Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Miyamoto T
Microsystem Research Center Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Miyamoto Tomoyuki
Microsystem Research Center P&i Laboratory Tokyo Institute Of Technology
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Iga Kenichi
Microsystem Research Center P & I Lab . Tokyo Institute Of Technology
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Miyamoto T
Tokyo Inst. Technol. Tokyo Jpn
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Iga Kenichi
Tokyo Institute Of Technology
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IGA Kenichi
Microsystem Research Center, Tokyo Institute of Technology
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Shinada S
National Institute Of Information And Communications Technology
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Koyama Fumio
Tokyo Institute Of Technology 4259 Nagatsuta
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IGA Kenichi
Tokyo Institute of Technology, Nagatsuta Campus, Research Laboratory of Precision Machinery and Elec
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MATSUTANI Akihiro
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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BABA Toshihiko
Division of Electrical and Computer Engineering, Yokohama National University
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Baba T
Yokohama National Univ. Yokohama‐shi Jpn
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MATSUTANI Akihiro
Microsystem Research Center, P&I Laboratory, Tokyo Institute of Technology
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Kageyama Takeo
Microsystem Research Center Precision & Intelligence Laboratory Tokyo Institute Of Technology
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近藤 隆
富山医科薬科大学医学部放射線基礎医学教室
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Kondo T
Osaka Univ. Osaka Jpn
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MIYAMOTO Tomoyuki
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Inaba Yusaku
Department Of Materials Chemistry Graduate School Of Engineering Tohoku University
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Ikenaga Yoshihiko
Microsystem Research Ceterk Precision & Intelligence Laboratory Tokyo Institute Of Technology
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近藤 隆
富山医科薬科大学生命科学実験センター
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Arai Masakazu
Microsystem Research Center P&i Laboratory Tokyo Institute Of Technology
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Kawaguchi M
Microsystem Research Center Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Takeuchi K
Riken (the Institute Of Physical And Chemical Research)
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SCHLENKER Dietmar
Microsystem Research Center, Precision and intelligence Laboratory, Tokyo institute of Technology
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Kawaguchi Masao
Microsystem Research Center Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Makino Shigeki
Microsystem Research Center Precision & Intelligence Laboratory Tokyo Institute Of Technology
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NISHIYAMA Nobuhiko
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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KONDO Takashi
Microsystem Research Center, Precision & Intelligence Laboratory, Tokyo Institute of Technology
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KAGEYAMA Takeo
Microsystem Research Center, Precision & Intelligence Laboratory, Tokyo Institute of Technology
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OHTSUKI Hideo
Samco International Inc.
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YOKOUCHI Noriyuki
Yokohama Research and Development Laboratories, Furukawa Electric Co.Ltd.
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SHINADA Satoshi
Precision & Intelligence Laboratory, Tokyo Institute of Technology
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ARAI Masakazu
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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NISHIYAMA Nobuhiko
Microsystem Research Center, Precision & Intelligence Laboratory, Tokyo Institute of Technology
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Ohta M
Microsystem Research Center P & I Lab. Tokyo Institute Of Technology
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Ohta Masataka
Microsystem Research Center P & I Lab. Tokyo Institute Of Technology
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MATSUURA Tetsuya
Microsystem Research Center, Precision and Intelligence Laboratory, Tokyo Institute of Technology
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IKENAGA Yoshihiko
Microsystem Research Ceterk, Precision & Intelligence Laboratory, Tokyo Institute of Technology
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AZUCHI Munechika
Microsystem Research Center, Precision & Intelligence Laboratory, Tokyo Institute of Technology
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GOUARDES Eric
Microsystem Research Center, Precision and Intelligence Laboratory
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Mukaihara Toshikazu
Precision & Intelligence Lab., Tokyo Institute of Technology
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OHNOKI Noriyuki
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Ohnoki Noriyuki
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Gouardes Eric
Microsystem Research Center Precision And Intelligence Laboratory
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MIYAMOTO Tomoyuki
Tokyo Institute of Technology, Precision & Intelligence Laboratory
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SCHLENKER Dietmar
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Ohtake N
Niigata Univ. Niigata Jpn
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Kondo Tetsuya
Storage Technologies Research Center Victor Company Of Japan Limited
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Hatori Nobuaki
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Kondo Takahiro
Institute Of Applied Physics University Of Tsukuba
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近藤 隆
富山大学 医学部 放射線基礎医学
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FURUHATA Tatsuya
Microsystem Research Center, P & I Lab., Tokyo Institute of Technology
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KAWAGUCHI Masao
Microsystem Research Center, Precision and Intelligence Laboratory, Tokyo Institute of Technology
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MAKINO Shigeki
Microsystem Research Center, Precision & Intelligence Laboratory, Tokyo Institute of Technology
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MUKAIHARA Toshikazu
Tokyo Institute of Technology, Precision and Intelligence Laboratory
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Suzuki Katsumasa
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Honda T
Japan Advanced Inst. Sci. And Technol. Ishikawa Jpn
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Amano T
Microsystem Research Center P&i Laboratories Tokyo Institute Of Technology
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SHINADA Satoshi
Microsystem Research Center, Precision & Intelligence Laboratory, Tokyo Institute of Technology
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HONDA Tohru
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Yogo Yukiaki
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Miura T
Microsystem Research Center P&i Laboratory Tokyo Institute Of Technology
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Kato Junichi
Ntt Lsi Laboratories
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Kato Junichi
Ntt System Electronics Laboratories
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Kato J
Ntt Telecommunications Energy Lab. Kanagawa Jpn
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Kato J
Ntt Lsi Laboratories
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MIURA Toru
Microsystem Research Center, P&I Laboratory, Tokyo Institute of Technology
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MITSUGI Satoshi
NTT Basic Research Laboratories, NTT Corp.
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UCHIDA Takeshi
Microsystem Research Center, Precision & Intelligence Laboratory, Tokyo Institute of Technology
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MATSUI Yasutaka
Microsystem Research Center, P & I Laboratories, Tokyo Institute of Technology
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Mitsugi Satoshi
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Baba Toshihiko
Tokyo Institute of Technology, Research Laboratory of Precision Machinery and Electronics
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Kukimoto H
National Space Dev. Agency Of Japan Ibaraki Jpn
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BABA Toshihiko
Yokohama National University, Department of Electrical and Computer Engineering
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KAWAGUCHI Masao
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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KONDO Takashi
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Yanashima Katsunori
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Kimura T
Photonics Research Institute National Institute Of Advanced Industrial Science And Technology
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Uchida Takeshi
Department Of Mechanical Engineering Kitakyushu National College Of Technology
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SEKIGUCHI Shigeaki
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Chen Z
Graduate School Of Bio-applications And Systems Engineering (base) Tokyo University Of Agriculture A
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Kondo T
Hiroshima Univ. Higashi-hiroshima‐shi Jpn
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Kukimoto H
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology:(present Address)toppan Pri
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Mitsugi S
Ntt Basic Research Laboratories Ntt Corp.
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Kusaka Takashi
Department Of Pediatrics Faculty Of Medicine Kagawa University
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YAMATOYA Takeshi
Precision and Intelligence Laboratory, Microsystem Research Center, Tokyo Institute of Technology
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Hayashi Y
Hadepartment Of Environmental Technology And Urban Planning Nagoya Institute Of Technology
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Kondo T
Technology Development Division Victor Company Of Japan Ltd. (jvc)
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Hayashi Y
Research Laboratory Of Resources Utilization Tokyo Institute Of Technology
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MAEKAWA Hiroaki
Nagaoka University of Technology
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MATSUTANI Akihiro
Tokyo Institute of Technology, Precision and Intelligence Laboratory
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MIZUTANI Akimasa
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Maekawa Hiroaki
Tokyo Institute Of Technology Precision And Intelligence Laboratory
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YOKOUCHI Noriyuki
Tokyo Institute of Technology, Precision & Intelligence Laboratory
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KUKIMOTO Hiroshi
Imaging Science and Engineering Laboratory,Tokyo Institute of Technology
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Hayashi Yasuaki
Institute For Super Materials Ulvac Japan Ltd.
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GOUARDES Eric
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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CHEN Zhibiao
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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SEKIGUCHI Shigeaki
Microsystem Research Center, Precision and Intelligence Laboratory, Tokyo Institute of Technology
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OKAZAKI Gen
Microsystem Research Center, Precision and Intelligence Laboratory, Tokyo Institute of Technology
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KIMURA Tadayoshi
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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GOTO Kenya
Department of Information and Communication Technology Tokai University
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OHNOKI Noriyuki
Tokyo Institute of Technology, Precision and Intelligence Laboratory
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Goto K
Department Of Information And Communication Technology Tokai University
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Okazaki Gen
Microsystem Research Center Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Baba T
Fundamental Research Laboratories Nec Corporation:(present Office)silicon System Laboratories Nec Co
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Loh Terhoe
Tokyo Institute Of Technology Precision And Intelligence Laboratory
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INABA Yuichi
Tokyo Institute of Technology, Precision and Intelligence Laboratory
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AMANO Takeru
Microsystem Research Center, Precision and Interlligence Laboratory, Tokyo Institute of Technology
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GOTO Kenya
Tokai University
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Hayashi Y
Univ. Tsukuba Ibaraki Jpn
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KONDOH Tomonobu
Division of Electrical and Computer Engineering, Yokohama National University
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原 一広
「応用物理」編集委員会
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藤田 雅之
レーザー技術総合研究所
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Lim S
Advanced Products Res. And Dev. Lab. Tx Usa
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Lim Sang
Department Of Chemical System Engineering University Of Tokyo:(present Address)department Of Electri
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Yoshino Junji
Department Of Internal Medicine Second Teaching Hospital School Of Medicine Fujita Health University
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Vaccaro Pablo
Atr Adaptive Communications Research Laboratories
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Vaccaro Pablo
Atr Optical And Radio Communications Research Laboratories
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Watanabe Teruo
Futaba Corporation
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Watanabe T
Components Development Group Sony Corporation
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Watanabe T
Ritsumeikan Univ. Shiga Jpn
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Watanabe Tetsu
Components Development Group Sony Corporation
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AOKI Yasuhiko
Microsystem Research Center, Tokyo Institute of Technology
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Watanabe T
Tokyo Inst. Technol. Kanagawa Jpn
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Watanabe T
Reserch And Development Division Toto Ltd.
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SUZUKI Ryoichiro
Microsystem Research Center, Precision and Intelligence Laboratory, Tokyo Institute of Technology
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IWASAKI Takahiro
Microsystem Research Center, P & I Lab., Tokyo Institute of Technology
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KASHIHARA Yoshihiro
Microsystem Research Center, P & I Lab., Tokyo Institute of Technology
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UCHIYAMA Yasuhiro
Microsystem Research Center, Precision & Intelligence Laboratory, Tokyo Institute of Technology
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TAKEDA Kazutaka
Microsystem Research Center, Precision & Intelligence Laboratory, Tokyo Institute of Technology
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MINOBE Shugo
Microsystem Research Center, Precision and Intelligence Laboratory
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MAKlNO Shigeki
Microsystem Research Center, Precision & Intelligence Laboratory
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Shimizu Mitsuaki
Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology
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Kato Junnichi
Precision & Intelligence Lab., Tokyo Institute of Technology
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MITSUGI Satoshi
Tokyo Institute of Technology, Precision and Intelligence Laboratory
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KATO Junichi
Tokyo Institute of Technology, Precision and Intelligence Laboratory
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Takagi Toshio
Faculty Of Science And Technology Keio University
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Abe M
Mitsui Chemicals Inc. Tokyo Jpn
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ABE Makoto
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Watanabe T
Tokyo Univ. Agriculture And Technol. Tokyo Jpn
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Watanabe T
Tohoku Univ. Sendai Jpn
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Watanabe Toshihide
Atr Adaptive Communications Research Laboratories:(present Address)science And Technical Research La
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Watanabe Toshihide
Atr Adaptive Communications Research Laboratories:(present Address)nhk Science And Technical Researc
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MUNEKATA Hiro
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology
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Hara Kazuhiko
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Yoshino J
Department Of Physics Tokyo Institute Of Technology
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KATO Junichi
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Fujita Masayuki
Yokohama National University Department Of Electrical And Computer Engineering
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SAKAI Atsushi
Yokohama National University, Department of Electrical and Computer Engineering
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FUJITA Masayuki
Faculty of Electrical and Computer Engineering, Yokohama National University
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USHIGOME Reona
Faculty of Electrical and Computer Engineering, Yokohama National University
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BABA Toshihiko
Faculty of Electrical and Computer Engineering, Yokohama National University
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Kurita Yoichiro
Tokyo Institute Of Technology Precision & Intelligence Laboratory
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CHEN Zhibiao
Microsystem Research Center, Precision and Intelligence Laboratory, Tokyo Institute of Technology
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GEMMER Jochen
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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GEMMER Christian
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Mori Kenichi
Tokyo Institute Of Technology Precision And Intelligence Laboratory
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KIMURA Tadayoshi
Microsystem Research Center, Precision and Intelligence Laboratory, Tokyo Institute of Technology
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OKAZAKI Gen
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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MIURA Toshinori
Murata Mfg. Co., Ltd.
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HAYASHI Yukio
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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HATORI Nobuaki
Tokyo Institute of Technology, Precision and Intelligence Laboratory
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HAYASHI Yukio
Tokyo Institute of Technology, Precision and Intelligence Laboratory
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Takahashi M
Semiconductor Leading Edge Technologies Inc
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Vaccaro P
Atr Adaptive Communications Research Laboratories
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Gemmer Jochen
Precision And Intelligence Laboratory Tokyo Institute Of Technology:(present Address)institut Fur Th
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Takagi T
Faculty Of Science And Technology Keio University
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Inoue Kousuke
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Munekata H
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Munekata Hiro
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Aoki Yasuhiko
Microsystem Research Center Tokyo Institute Of Technology
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Ushigome Reona
Yokohama National University Department Of Electrical And Computer Engineering
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ARIGA Maiko
Yokohama Research and Development Laboratories, Furukawa Electric Co.Ltd.
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Ariga M
Yokohama National University Division Of Electrical And Computer Engineering
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Kukimoto Hiroshi
Department Of Applied Physics Faculty Of Engineering University Of Tokyo
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HASHIZUME Jiro
Microsystem Research Center, P&I Laboratory, Tokyo Institute of Technology
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Matsuoka K
Semiconductor Leading Edge Technol. Yokohama Jpn
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Sakaguchi Takahiro
Microsystem Research Center Precision And Intelligence Laboratory Tokyo Institute Of Technology
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SUZUKI Kouichi
Precision & Intelligence Laboratory, Tokyo Institute of Technology
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Furuya Kazuhito
Tokyo Institute Of Technology Dept. Of Physical Electronics
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Miura T
Murata Mfg. Co. Ltd.
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KANEKO Yasuhisa
Tokyo Institute of Technology, Nagatsuta Campus, Precision and Intelligence Laboratory
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TAMANUKI Takemasa
Tokyo Institute of Technology, Nagatsuta Campus, Precision and Intelligence Laboratory
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KATOH Masao
Tokyo Institute of Technology, Nagatsuta Campus, Precision and Intelligence Laboratory
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Mori Shota
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Kondo Tomonobu
Division of Electrical and Computer Engineering, Yokohama National University
著作論文
- Three-Dimensional Hollow Optical Waveguide with an Etched Groove Substrate
- Modeling and Fabrication of Hollow Optical Waveguide for Photonic Integrated Circuits
- Hollow Optical Waveguide for Temperature-Insensitive Photonic Integrated Circuits : Optics and Quantum Electronics
- Photoluminescence Characterization of InAs Quantum Dots on GaNAs Buffer Layer by Metalorganic Chemical Vapor Deposition
- Structure-Dependent Lasing Characteristics of Tunnel Injection GaInAs/AlGaAs Single-Quantum-Well Lasers
- 1.2μm Band GaInAs/GaAs High-Density Multiple-Wavelength Vertical Cavity Surface Emitting Laser Array
- Optical Quality Dependence on Growth Rate for Solid-Source Molecular Beam Epitaxy Grown Highly Strained GaInAsSb/GaAs Quantum Wells
- Improvement in Photoluminescence Efficiency of GaInNAs/GaAs Quantum Wells Grown by Metalorganic Chemical Vapor Deposition for Low-Threshold 1.3μm Range Lasers
- Surfactant Effect of Sb on GaInAs Quantum Dots Grown by Molecular Beam Epitaxy
- Elongation of Emission Wavelength of GaInAsSb-Covered (Ga) InAs Quantum Dots Grown by Molecular Beam Epitaxy
- Effect of Quantum Well Width Reduction for GaInNAs/GaAs Lasers
- Effect of Annealing on Highly Strained GaInAs/GaAs Quantum Wells : Semiconductors
- Low Threshold Current Density Operation of 1.16μm Highly Strained GaInAs/GaAs Vertical Cavity Surface Emitting Lasers on (100) GaAs Substrate : Optics and Quantum Electronics
- Photoluminescence and Lasing Characteristics of GaInNAs Quantum Wells Using GaInAs Intermediate Layers
- Nitrogen Composition and Growth Temperature Dependence of Growth Characteristics for Self-Assembled GaInNAs/GaAs Quantum Dots by Chemical Beam Epitaxy
- 1.4μm GaInNAs/GaAs Quantum Well Laser Grown by Chemical Beam Epitaxy : Short Note
- Temperature Characteristics of λ= 1.3μm GaInNAs/GaAs Quantum Well Lasers Grown by Chemical Beam Epitaxy(Special Issue on Recent Progress in Semiconductor Lasers and Light-Emitting Devices)
- Correlation Length Measurement of Sidewall Roughness of Dry Etched Facet and Its Effect on Reflectivity
- GaInAs/GaAs Micro-Arc Ring Semiconductor Laser
- Design and Lasing Operation of Micro-Arc-Ring Lasers
- Characterization of Residual Stress in Active Region due to AlAs Native Oxide of Vertical-Cavity Surface-Emitting Lasers
- InGaAs/GaAs Strained Quantum Well Lasers with Etched Micro-Corner Reflectors
- GaInAsP Microcylinder (Microdisk) Injection Laser With AlInAs (O_x) Claddings : Optics and quantum Electronics
- Refractive Index Variation in GaInAsP/InP Quantum Confined Structures Grown by Chemical Beam Epitaxy
- Lasing Characteristics of Low-Threshold GaInNAs Lasers Grown by Metalorganic Chemical Vapor Deposition : Optics and Quantum Electronics
- Lasing Characteristics of 1.2 μm Highly Strained GaInAs/GaAs Quantum Well Lasers
- Optical Quality Dependence on Growth Rate for Metalorganic Chemical Vapor Deposition Grown GaInNAs/GaAs
- Inclusion of Strain Effect in Miscibility Gap Calculations for III-V Semiconductors
- High Temperature Characteristics of Nearly 1.2 μm GaInAs/GaAs/AlGaAs Lasers
- Tunnel Junction for Long-Wavelength Vertical-Cavity Surface-Emitting Lasers : Optics and Quantum Electronics
- Improvement of Current Injection Uniformity and Device Resistance in Long-Wavelength Vertical-Cavity Surface-Emitting Laser Using a Tunnel Junction
- Long Wavelength GaInAsP/InP Laser with n-n Contacts Using AlAs/InP Hole Injecting Tunnel Junction
- Design and Fabrication of InGaAs/GaAs Quantum Wires for Vertical-Cavity Surface-Emitting Lasers
- Design and Fabrication of InGaAs/GaAs Quantum Wires for Vertical-Cavity Surface-Emitting Lasers
- Carrier Transport in p-Type GaInAsP/InP Distributed Bragg Reflectors
- Near-Field Analysis of Micro-Aperture Surface Emitting Laser for High Density Optical Data Storage
- Fabrication of Micro-Aperture Surface Emitting Laser for Near Field Optical Data Storage
- High-Power CW Operation of GalnAsP/InP Superlumlnescent Light-Emitting Diode with Tapered Active Region : Optics and Quantum Electronics
- Low-Temperature Dry Etching of InP by Inductively Coupled Plasma Using HI/Cl_2
- Cl_2-based Inductively Coupled Plasma Etching of InP Using Internal Antenna
- Measurement of Plasma Density for Control of Etching Profile in Inductively Coupled Plasma Etching of InP
- Single High-Order Transverse Mode Surface Emitting Laser with Micromachined Surface Relief(Special Issue on Recent Progress of Integrated Photonic Devices)
- Fabrication of a ZnSe-Based Vertical Fabry-Perot Cavity Using SiO_2/TiO_2 Multilayer Reflectors and Resonant Emission Characteristics
- Transverse-Mode Characteristics of InGaAs/GaAs Vertical-Cavity Surface-Emitting Lasers Considering Gain Offset
- Emission Spectrochemical Analysis in Dry Etching Process of InP by Cl_2 Inductively Coupled Plasma
- Plasma Diagnostics in Inductively Coupled Plasma Etching Using Cl_2/Xe
- Vertical and Smooth Etching of InP by Cl_2/Xe Inductively Coupled Plasma
- Reflection Induced Voltage Change of Surface Emitting Laser for Optical Probing
- Monolothic Formation of Metal Organic Chemical Vapor Deposition Grown Multi-wavelength Vertical Cavities with Highly Strained GaInAs/GaAs Quantum Wells on GaAs (311)B
- Noise Suppression and Intensity Modulation in Gain-Saturated Semiconductor Optical Amplifiers and Its Application to Spectrum-Sliced Light Sources
- High Power GaInAsP/InP Strained Quantum Well Superluminescent Diode with Tapered Active Region
- Finite Element Analysis of Thermal Characteristics in Continuous Wave Long Wavelength Surface Emitting Lasers (II) : Semiconductor Distributed Bragg Reflectors
- Finite Element Analysis of Thermal Characteristics in Continuous Wave Long Wavelength Surface Emitting Lasers (I) : Dielectric Cavity Structures
- Vertical Cavity Surface-Emitting Laser Array for 1.3μm Range Parallel Optical Fiber Transmissions
- Electron Wave Reflection by Multiquantum Barrier
- Growth and Characterization of Vertical-Cavity Surface-Emitting Lasers Grown on (311)A-Oriented GaAs Substrates by Molecular Beam Epitaxy
- Formation of Highly Conductive p-Type ZnSe Using Li_3N Diffusion
- Threshold Estimation of GaN-Based Surface Emitting Lasers Operating in Ultraviolet Spectral Region
- Selective Etching of GaAs for ZnSe Based Surface Emitting Lasers
- Low Threshold GaInAsP Lasers with Semiconductor/Air Distributed Bragg Reflector Fabricated by Inductively Coupled Plasma Etching
- Theoretical and Experimental Estimations of Photon Recycling Effect in Light Emitting Devices with a Metal Mirror
- Continuous Wave GaInAsP/InP Surface Emitting Lasers with a Thermally Conductive MgO/Si Mirror
- A Novel Birefringent Distributed Bragg Reflector Using a Metal/Dielectric Polarizer for Polarization Control of Surface-Emitting Lasers
- First Room Temperature CW Operation of GaInAsP/InP Surface Emitting Laser
- GaInAsP/InP Low-Mesa CPBH Surface Emitting Laser with an Optimally Deposited MgO/Si Multilayer Laser Mirror
- A Low-Threshold 1.3μm GaInAsP/InP Flat-Surface Circular Buried Heterostructure Surface Emitting Laser
- GaInAs/AlGaInAs Semiconductor Lasers on InP Substrate with AlAs Oxide Current Confinement
- Composition Dependence of Thermal Annealing Effect on 1.3 μm GaInNAs/GaAs Quantum Well Lasers Grown by Chemical Beam Epitaxy : Semiconductors
- Thermal Annealing of GaInNAs/GaAs Quantum Wells Grown by Chemical Beam Epitaxy and Its Effect on Photoluminescence
- Inductively coupled plasma etching of silicon using solid iodine as an etching gas source (Special issue: Microprocesses and nanotechnology)
- 1.12μm PolariZation Controlled Highly Strained GalnAs Vertical-Cavity Surface-Emitting Lasers on GaAs(311)B by Metal Organic Chemical Vapor Deposition : Optics and Quantum Electronics
- Temperature Insensitive Micromachined GaAlAs/GaAs Vertical Cavity Wavelength Filter (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- Temperature Insensitive Micromachined GaAlAs/GaAs Vertical Cavity Wavelength Filter (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- GaInAs/GaAs Single Mode Vertical Cavity Surface Emitting Laser (VCSEL) Array on GaAs (311) B(Special Issue on Optical Interconnects/Optical Signal Processing)
- 1.15 μm Lasing Operation of Highly Strained GaInAs/GaAs on GaAs (311)B Substrate with High Characteristic Temperature (T_0 = 210 K)
- GaInAsP/InP Multi-Quantum Barrier (MQB) Grown by Chemical Beam Epitaxy (CBE)
- GaInAsP/InP Surface Emitting Lasers Grown by Chemical Beam Epitaxy and Wavelength Tuning Using an External Reflector
- An Optical Absorption Property of Highiy Beryllium-Doped GaInAsP Grown by Chemical Beam Epitaxy
- Spray Selective Etch Process for Short-Cavity Fabrication of GaAs/GaAlAs Surface Emitting Laser
- Beryllium Doping for Ga_In_As/InP Quantum Wells by Chemical Beam Epitaxy (CBE)
- Growth of Ga_In_As/InP Double-Heterostructure Wafers by Chemical Beam Epitaxy (CBE)
- Highly Beryllium-Doped and Lattice-Matched GaInAsP/InP Growth by Chemical Beam Epitaxy (CBE)
- Study of Inelastic Scattering Effect in Unstrained and Strain-Compensated GaInAs/GaInP Multiquantum Barriers
- Strain-Compensated Multi-Quantum Barriers for Reduction of Electron Leakages in Long-Wavelength Semiconductor Lasers
- 2×2 Multiwavelength Micromachined AIGaAs/GaAs Vertical Cavity Filter Array with Wavelength Control Layer
- Micromachined Semiconductor Vertical Cavity for Temperature Insensitive Surface Emitting Lasers and Optical Filters
- Characterization of Sidewall Damage Induced by Reactive Ion-Beam Etching
- Reactive Ion Beam Etch of GaInAsP/InP Multilayer and Removal of Damaged Layer by Two-Step Etch
- Microfabrication of Dielectric Multilayer Reflector by Reactive Ion Etching and Characterization of Induced Wafer Damage
- Effect of Surface Quality on Overgrowth of Highly Strained GaInAs/GaAs Quantum Wells and Improvement by a Strained Buffer Layer
- Quality Improvement of GaInNAs/GaAs Quantum Well Growth by Metalorganic Chemical Vapor Deposition Using Tertiarybutylarsine
- Proposal of Optically Pumped Tunable Surface Emitting Laser : Optics and Quantum Electronics
- Comparison of Luminescence from InP Processed by Reactive Ion Beam Etching
- A Study on Etching Parameters of a Reactive Ion Beam Etch for GaAs and InP
- Highly Stable Single Polarization Operation of GaInAs/GaAs Vertical-Cavity Surface-Emitting Laser on GaAs(311)B Substrate under High-Speed Modulation
- Vertical-Cavity Surface-Emitting Laser Array on GaAs(311)B Substrate Exhibiting Single-Transverse Mode and Stable-Polarization Operation
- AlAs Oxidation System with H_2O Vaporizer for Oxide-Confined Surface Emitting Lasers
- Interface Recombination Reduction by (NH_4)_2S_x-Passivation in Metalorganic Chemical Vapor Deposition Regrown GaAlAs/GaAs Buried Heterostructure Lasers and Estimation of Threshold Currents in Microeavity Surface Emitting Lasers
- Threshold and Modulation Characteristics of Photon-Recycled Semiconductor Lasers
- Estimation of Threshold Current of Microcavity Surface Emitting Laser with Cylindrical Waveguide
- Ammonium Sulfide Passivation for AlGaAs/GaAs Buried Heterostructure Laser Fabrication Process
- Etching and Optical Characteristics in GaAs/GaAlAs Surface Emitting Laser Fabrication Using a Novel Spray Etch
- Low Bias Voltage Dry Etching of InP by Inductively Coupled Plasma Using SiCl_4/Ar
- C_ Resist Mask of Electron Beam Lithography for Chlorine-Based Reactive Ion Beam Etching
- Surface Temperature Increase in Reactive Ion Beam Etch and Improvement of Profiles by Multistep Etching
- Polarization Control of Surface Emitting Lasers by Anisotropic Biaxial Strain
- Measurement of Sidewall Roughness of InP Etched by Reactive Ion Bearn Etching