Watanabe T | Tohoku Univ. Sendai Jpn

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概要

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著作論文

Fabrication of 0.1μm Line-and-Space Patterns using Soft X-Ray Reduction Lithography
Sub-0.1 μm Resist Patterning in Soft X-Ray (13 nm) Projection Lithography
Relationship between Electrical Resistivity and Electrostatic Force of Alumina Electrostatic Chuck
Multiphonon Raman Scattering Enhanced by Resonance with Band Gap A_g Luminescence State in Trans-Polyacetylene
Blurring and Broadening of Reflection Spectra Due to Structural and Alignment Changes of Conjugated Chains Caused by Isomerization and Stretching in Trans-Polyacetylene
Ring-Field Extreme Ultraviolet Exposure System Using Aspherical Mirrors
Electroluminescence from Lateral P-N Junctions Grown on (111)A GaAs Patterned Substrates
Low Resistance NiAuGe/Au Ohmic Contacts on N-Type (111)A GaAs
Demonstration of Lateral p-n Subband Junctions in Si Delta-Doped Quantum Welts on (111)A Patterned Substrates
Low Diffusivity of Dopants in (111)A GaAs
Misorientation Dependernce of Crystal Structures and Electrical Properties of Si-Doped AlAs Grown on (111)A GaAs by Molecular Beam Epitaxy
Substrate Misorientation Effects on Silicon-Doped AlGaAs Layers Grown on GaAs(111)A by Molecular Beam Epitaxy
Lateral P-N Subband Junctions Fabricated on Patterned Substrates
Estimation of the Surface State Density of N-Type (111)A GaAs Grown Using Molecular Beam Epitaxy
Applying an Objective Lens of 0.7-Numerical Aperture to a Center-Aperture-Detection Type of Magnetically Induced Superresolution Disk
Evaluation of a 120mm Sized Magneto optical Disk System of Over 6 GB Capacity
Evaluation of Double-Layered Magnetic Recording Medium Composed of Perpendicular and Longitudinal Anisotropy Layers
Spontaneous Formation of Nanostructures in In_xGa_As Epilayers Grown by Molecular Beam Epitaxy on GaAs Non-(100)-oriented Substrates
Spontaneous Formation of Nanostructures in In_xGa_As Epilayers Grown by Molecular Beam Epitaxy on GaAs Non-(100)-Oriented Substrates
Carrier Dynamics in Piezoelectric Quantum Wells Grown on GaAs (111)A, (211)A and (311)A Studied by Time-Resolved Photoluminescence Spectroscopy
Carrier Dynamics in Piezoelectric Quantum Wells Grown on GaAs (111)A, (211)A and (311)A Studied by Time Resolved Photoluminescence Spectroscopy
Quantum-Confined Stark Shift Due to Piezoelectric Effect in InGaAs/GaAs Quantum Wells Growrn on (111)A GaAs
Influence of the Piezoelectric Effect on the Energy Levels of InGaAs/GaAs Strained Quantum Wells Grown on (311)A GaAs
Growth and Characterization of Vertical-Cavity Surface-Emitting Lasers Grown on (311)A-Oriented GaAs Substrates by Molecular Beam Epitaxy
Fabrication and Characterization of Comb-Shaped Lateral Field-Emitter Arrays

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