FUJITA Kazuhisa | ATR Optical and Radio Communications Research Laboratories
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概要
関連著者
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WATANABE Toshihide
ATR Optical and Radio Communication Research Laboratory
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FUJITA Kazuhisa
ATR Optical and Radio Communications Research Laboratories
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Fujita K
Department Of Electrical Engineering Kyushu Institute Of Technology
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Fujita K
Gifu National Coll. Technol. Gifu Jpn
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Fujita K
Atr Adaptive Communications Research Laboratories
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Watanabe Teruo
Futaba Corporation
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Watanabe T
Components Development Group Sony Corporation
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Watanabe T
Ritsumeikan Univ. Shiga Jpn
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Watanabe Tetsu
Components Development Group Sony Corporation
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Watanabe T
Reserch And Development Division Toto Ltd.
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Watanabe T
Tohoku Univ. Sendai Jpn
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Watanabe Toshihide
Atr Adaptive Communications Research Laboratories:(present Address)science And Technical Research La
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Fujita Kazuhisa
Ion Engineering Research Institute Corporation
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Fujita K
Takasago R & D Center Mitsubishi Heavy Industries Ltd.
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Watanabe T
Department Of Innovative And Engineered Materials Interdisciplinary Graduate School Of Science And E
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Vaccaro Pablo
Atr Adaptive Communications Research Laboratories
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Vaccaro Pablo
Atr Optical And Radio Communications Research Laboratories
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Watanabe T
Tokyo Inst. Technol. Kanagawa Jpn
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Watanabe T
Tokyo Univ. Agriculture And Technol. Tokyo Jpn
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Vaccaro P
Atr Adaptive Communications Research Laboratories
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Hosoda Masahiro
Frontier Research Program The Institute Of Physical And Chemical Research (riken):(present Address)
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Hosoda M
Department Of Materials Science And Technology Faculty Of Engineering Gifu University
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HIRAI Manabu
ATR Optical and Radio Communications Research Laboratories
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OHNISHI Hajime
ATR Optical and Radio Communications Research Laboratories
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Hosoda Masahiro
Central Research Laboratories Sharp Corporation
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HOSODA Makoto
ATR Optical and Radio Communications Research Laboratories
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Hosoda Makoto
ATR Optical and Radio Communications Research Laboratories, Hikaridai, Seika-cho, Soraku-gun, Kyoto 619-02, Japan
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Hirai M
Osaka Univ. Osaka Jpn
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Ohnishi Hiroaki
Fujitsu Laboratories Ltd.
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Ohnishi H
Taihei Kogyo Co. Ltd. Himeji Jpn
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Hirai M
Department Of Earth And Space Science Graduate School Of Science Osaka University
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JIMBO Takashi
Research Center for Micro-Structure Device, Nagoya Institute of Technology
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Egawa Takashi
Research Center For Nano-device And System Nagoya Institute Of Technology
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Tominaga Koji
Atr Optical And Radio Communications Research Laboratories
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Tominaga Koji
Atr Optical And Radio Communications Research Laboratories:(present Address) Sanyo Electric Co. Ltd.
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Tominaga Koji
Department Of Industrial Chemistry Faculty Of Engineering Chubu University
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Tominaga Koji
Semiconductor Research Center Sanyo Electric Co. Ltd.
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Watanabe Toshihide
Atr Optical And Radio Communications Research Laboratories
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Nakamura K
Department Of Electrical Engineering School Of Engineering Nagoya University
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Hirai Masaaki
Research Laboratory For Surface Science Faculty Of Science Okayama University
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UMENO Masayoshi
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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Yamamoto Takenori
Deptarment Of Electrical And Electronic Engineering Toyohashi University Of Technology
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Yamamoto Tokujirou
Department Of Materials Science And Engineering Kyoto University
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Takahashi M
Semiconductor Leading Edge Technologies Inc
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TOMINAGA Kouji
ATR Optical and Radio Communications Research Laboratories
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YAMAMOTO Teiji
ATR Optical and Radio Communications Research Laboratories
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Takebe Toshihiko
Atr Optical And Radio Communications Research Laboratories
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Tominaga K
Kobe Univ. Kobe Jpn
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Watanabe Takeo
Univ. Hyogo Hyogo Jpn
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Ohnishi Hiroaki
Division Of Hematology Faculty Of Medicine Kagawa University
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Hirai Masamitsu
Department Of Applied Physics Faculty Of Engineering Tohoku University
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TAKAHASHI Mitsuo
ATR Optical and Radio Communications Research Laboratories
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Niwano Yutaka
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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Nitatori Kouichi
ATR Optical and Radio Communications Research Laboratories
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Niwano Y
Mitsubishi Electric Corp. Kumamoto Jpn
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Yamamoto Takayoshi
The Institute Of Scientific And Industrial Research Osaka University
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Takahashi Minoru
Ceramic Engineering Research Laboratory Nagoya Institute Of Technology
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Watanabe Takayuki
Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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Hirai Manabu
ATR Optical and Radio Communications Research Laboratories, 2-2 Hikaridai, Seika-cho,
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Tominaga Kouji
ATR Optical and Radio Communications Research Laboratories, Hikaridai, Seika-cho, Soraku-gun, Kyoto 619-02, Japan
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Ohnishi Hajime
ATR Optical and Radio Communications Research Laboratories, 2-2 Hikaridai, Seika-cho,
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Fujita Kazuhisa
ATR Optical and Radio Communications Research Laboratories, 2-2 Hikaridai, Seika-cho,
著作論文
- Thermal Stability of Beryllium Atoms in Be δ-Doped GaAs Grown on GaAs(111)A by Molecular Beam Epitaxy
- Lateral Tunneling Devices on GaAs (111)A and (311)A Patterned Substrates Grown by MBE Using Only Silicon Dopant
- Substrate Misorientation Effects on Silicon-Doped AlGaAs Layers Grown on GaAs(111)A by Molecular Beam Epitaxy
- Spontaneous Formation of Nanostructures in In_xGa_As Epilayers Grown by Molecular Beam Epitaxy on GaAs Non-(100)-Oriented Substrates
- Carrier Dynamics in Piezoelectric Quantum Wells Grown on GaAs (111)A, (211)A and (311)A Studied by Time-Resolved Photoluminescence Spectroscopy
- Carrier Dynamics in Piezoelectric Quantum Wells Grown on GaAs (111)A, (211)A and (311)A Studied by Time Resolved Photoluminescence Spectroscopy
- Quantum-Confined Stark Shift Due to Piezoelectric Effect in InGaAs/GaAs Quantum Wells Growrn on (111)A GaAs
- Characterization of GaAs P-N Structures Grownon GaAs (111) A Substrates Using Controlled All-Silicon Doping
- Influence of the Piezoelectric Effect on the Energy Levels of InGaAs/GaAs Strained Quantum Wells Grown on (311)A GaAs
- First Fabrication of AlGaAs/GaAs Double-Heterostructure Light-Emitting Diodes Grown on GaAs (111)A Substrates Using Only Silicon Dopant
- Lateral Tunneling Devices on GaAs (111)A and (311)A Patterned Substrates Grown by MBE Using Only Silicon Dopant