Thermal Stability of Beryllium Atoms in Be δ-Doped GaAs Grown on GaAs(111)A by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1996-06-15
著者
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Hirai M
Osaka Univ. Osaka Jpn
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WATANABE Toshihide
ATR Optical and Radio Communication Research Laboratory
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Fujita K
Department Of Electrical Engineering Kyushu Institute Of Technology
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Fujita K
Gifu National Coll. Technol. Gifu Jpn
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Fujita Kazuhisa
Ion Engineering Research Institute Corporation
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Fujita K
Takasago R & D Center Mitsubishi Heavy Industries Ltd.
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Watanabe T
Department Of Innovative And Engineered Materials Interdisciplinary Graduate School Of Science And E
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Ohnishi Hiroaki
Fujitsu Laboratories Ltd.
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Hirai Masaaki
Research Laboratory For Surface Science Faculty Of Science Okayama University
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HIRAI Manabu
ATR Optical and Radio Communications Research Laboratories
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OHNISHI Hajime
ATR Optical and Radio Communications Research Laboratories
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FUJITA Kazuhisa
ATR Optical and Radio Communications Research Laboratories
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Ohnishi H
Taihei Kogyo Co. Ltd. Himeji Jpn
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Hirai M
Department Of Earth And Space Science Graduate School Of Science Osaka University
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Watanabe Takeo
Univ. Hyogo Hyogo Jpn
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Ohnishi Hiroaki
Division Of Hematology Faculty Of Medicine Kagawa University
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Hirai Masamitsu
Department Of Applied Physics Faculty Of Engineering Tohoku University
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Fujita K
Atr Adaptive Communications Research Laboratories
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Watanabe Takayuki
Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
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