First Fabrication of AlGaAs/GaAs Double-Heterostructure Light-Emitting Diodes Grown on GaAs (111)A Substrates Using Only Silicon Dopant

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概要

• 論文の詳細を見る

• We have grown an AlGaAs/GaAs double-heterostructure (DH) light-emitting diode (LED) on a GaAs(111)A-5°-misoriented substrate using only Si dopant by molecular beam epitaxy. Conduction type and carrier concentration were controlled by flux ratio and Si cell temperature. Smooth heterointerfaces were also obtained. The p-n junction showed a turn-on voltage of 1.2 V and a reverse voltage of 2.5 V at 1 mA. The AlGaAs/GaAs LED exhibited dc operation at 300 K. The optical output power was 30 mW at 150 mA, and the peak in the spectrum was 875 nm with the full width at half-maximum of 28 nm.

• 社団法人応用物理学会の論文
• 1995-02-28

著者

• JIMBO Takashi

  Research Center for Micro-Structure Device, Nagoya Institute of Technology

• Egawa Takashi

  Research Center For Nano-device And System Nagoya Institute Of Technology

• WATANABE Toshihide

  ATR Optical and Radio Communication Research Laboratory

• Nakamura K

  Department Of Electrical Engineering School Of Engineering Nagoya University

• FUJITA Kazuhisa

  ATR Optical and Radio Communications Research Laboratories

• UMENO Masayoshi

  Research Center for Micro-Structure Devices, Nagoya Institute of Technology

• Niwano Yutaka

  Department of Electrical and Computer Engineering, Nagoya Institute of Technology

• Nitatori Kouichi

  ATR Optical and Radio Communications Research Laboratories

• Niwano Y

  Mitsubishi Electric Corp. Kumamoto Jpn

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