On the Effects of Gate-Recess Etching in Current-Collapse of Different Cap Layers Grown AlGaN/GaN High-Electron-Mobility Transistors
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概要
- 論文の詳細を見る
- 2006-03-25
著者
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SELVARAJ Lawrence
Research center for Nano-Device and System, Nagoya Institute of Technology
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EGAWA Takashi
Research center for Nano-Device and System, Nagoya Institute of Technology
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Egawa Takashi
Research Center For Nano-device And System Nagoya Institute Of Technology
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ISHIKAWA Hiroyasu
Research Center for Nano-Device and System, Nagaya Institute of Technology
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ARULKUMARAN Subramaniam
Research Center for Nano-Device and System, Nagoya Institute of Technology
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Selvaraj Lawrence
Research Center For Nano-device And System Nagoya Institute Of Technology
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Nishikawa H
Osaka Univ. Osaka Jpn
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Ishikawa H
Research Center For Nano-device And System Nagoya Institute Of Technology
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Arulkumaran Subramaniam
Research Center For Nano-device And System Nagoya Institute Of Technology
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Ishikawa H
Kddi R&d Laboratories Inc.
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Ishikawa Hiroyasu
Research And Development Laboratories Kokusai Denshin Denwa Co. Ltd.
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Egawa Takashi
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
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