Valence-Band Discontinuity at the AIN/Si Interface
スポンサーリンク
概要
- 論文の詳細を見る
- 2003-10-15
著者
-
EGAWA Takashi
Research center for Nano-Device and System, Nagoya Institute of Technology
-
JIMBO Takashi
Department of Environmental Technology & Urban Planning, Nagoya Institute of Technology
-
Jimbo T
Department Of Environment Technology And Urban Planning Nagoya Institute Of Technology
-
Egawa Takashi
Research Center For Nano-device And System Nagoya Institute Of Technology
-
ISHIKAWA Hiroyasu
Research Center for Nano-Device and System, Nagaya Institute of Technology
-
ZHANG Baijun
Research Center for Nano-Device and System, Nagoya Institute of Technology
-
Jimbo Takashi
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
-
Ishikawa H
Research Center For Nano-device And System Nagoya Institute Of Technology
-
Jimbo Takashi
Research Center For Micro-structure Devices Nagoya Institute Of Technology
-
Zhang B
Research Center For Nano-device And System Nagoya Institute Of Technology
-
Ishikawa H
Kddi R&d Laboratories Inc.
-
Ishikawa Hiroyasu
Research And Development Laboratories Kokusai Denshin Denwa Co. Ltd.
-
Zhang Baijun
Research Center For Micro-structure Devices Nagoya Institute Of Technology
-
Jimbo T
Ulvac Inc. Shizuoka Jpn
-
Ishikawa Hiroyasu
Nagoya Inst. Of Technol. Nagoya Jpn
-
Egawa Takashi
Research Center for Micro-Structure Devices, Nagoya Institute of Technology
関連論文
- A comparative study on AlGaN/GaN based HEMT and MIS-HEMT with Al2O3 as gate dielectric (Electron devices)
- First-Principles Calculation of Bandgap Bowing Parameter for Wurtzite InAlGaN Quaternary Alloy using Large Supercell
- Direct Bonding of Epitaxial GaAs Film on Si Substrate With Improved Optical Properties : Structure and Mechanical and Thermal Properties of Condensed Matter
- A comparative study on AlGaN/GaN based HEMT and MIS-HEMT with Al_2O_3 as gate dielectric(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
- A comparative study on AlGaN/GaN based HEMT and MIS-HEMT with Al_2O_3 as gate dielectric(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
- InAlN/GaN HEMT Structures on 4-in Silicon Grown by MOCVD(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
- InAlN/GaN HEMT Structures on 4-in Silicon Grown by MOCVD(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
- Influence of Structure and C_ Composition on Properties of Blends and Bilayers of Organic Donor-Acceptor Polymer/C_ Photovoltaic Devices
- Boron-Incorporated Amorphous Carbon Films Deposited by Pulsed Laser Deposition : Semiconductors
- Fabrication of a TiO_2-Based Solid-State Cell with an Organic Polymer as a Sensitizer : Optical Properties of Condensed Matter