Valence-Band Discontinuity at the AIN/Si Interface

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概要

• 論文の詳細を見る
• 2003-10-15

著者

• EGAWA Takashi

  Research center for Nano-Device and System, Nagoya Institute of Technology

• JIMBO Takashi

  Department of Environmental Technology & Urban Planning, Nagoya Institute of Technology

• Jimbo T

  Department Of Environment Technology And Urban Planning Nagoya Institute Of Technology

• Egawa Takashi

  Research Center For Nano-device And System Nagoya Institute Of Technology

• ISHIKAWA Hiroyasu

  Research Center for Nano-Device and System, Nagaya Institute of Technology

• ZHANG Baijun

  Research Center for Nano-Device and System, Nagoya Institute of Technology

• Jimbo Takashi

  Department Of Electrical And Computer Engineering Nagoya Institute Of Technology

• Ishikawa H

  Research Center For Nano-device And System Nagoya Institute Of Technology

• Jimbo Takashi

  Research Center For Micro-structure Devices Nagoya Institute Of Technology

• Zhang B

  Research Center For Nano-device And System Nagoya Institute Of Technology

• Ishikawa H

  Kddi R&d Laboratories Inc.

• Ishikawa Hiroyasu

  Research And Development Laboratories Kokusai Denshin Denwa Co. Ltd.

• Zhang Baijun

  Research Center For Micro-structure Devices Nagoya Institute Of Technology

• Jimbo T

  Ulvac Inc. Shizuoka Jpn

• Ishikawa Hiroyasu

  Nagoya Inst. Of Technol. Nagoya Jpn

• Egawa Takashi

  Research Center for Micro-Structure Devices, Nagoya Institute of Technology

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