Influence of Ammonia in the Deposition Process of SiN on the Performance of SiN/AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors on 4-in. Si(111)

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概要

• 論文の詳細を見る
• 2009-03-25

著者

• EGAWA Takashi

  Research center for Nano-Device and System, Nagoya Institute of Technology

• Selvaraj Susai

  Research Center For Nano-device And System Nagoya Institute Of Technology

• Arulkumaran Subramaniam

  Monolithic Microwave Integrated Circuit Design Center Temasek Laboratories Nanyang Technological Uni

• Ing Ng

  School Of Electrical And Electronic Engineering Nanyang Technological University

• HONG Liu

  School of Electrical and Electronic Engineering, Nanyang Technological University

• Ing Ng

  School Of Eee Division Of Microelectronics Nanyang Technological University

• Egawa Takashi

  Research Center for Micro-Structure Devices, Nagoya Institute of Technology

関連論文

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• A comparative study on AlGaN/GaN based HEMT and MIS-HEMT with Al_2O_3 as gate dielectric(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
• InAlN/GaN HEMT Structures on 4-in Silicon Grown by MOCVD(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
• InAlN/GaN HEMT Structures on 4-in Silicon Grown by MOCVD(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
• Influence of Ammonia in the Deposition Process of SiN on the Performance of SiN/AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors on 4-in. Si(111)
• Metalorganic Chemical Vapor Deposition and Material Characterization of Lattice-Matched InAlN/GaN Two-Dimensional Electron Gas Heterostructures
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• Novel Quaternary AlInGaN/GaN Heterostructure Field Effect Transistors on Sapphire Substrate
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