GaAs-Based Vertical-Cavity Surface-Emitting Laser on Si Substrate by Metalorganic Chemical Vapor Deposition

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概要

• 論文の詳細を見る

• We have fabricated an AlGaAs/GaAs surface emitting laser on a Si substrate by metalorganic chemical vapor deposition. A distributed Bragg reflector consisting of 23 periods of AlAs/Al_<0.1> Ga_<0.9>As semiconductor multilayers and a Au metal thin-film reflector are used as reflection mirrors of the Si substrate side and of the top side, respectively. The laser has a cavity which is three times as long as the lasing wavelength and has an Al_<0.3>Ga_<0.7>As/GaAs multi (10) quantum well structure. This laser exhibits a cw threshold current of 73 mA (3.7 kA/cm^2) at 100 K. In addition, the lasing wavelength is 844 nm with a full width at half-maximum of 2.2 nm. To our knowledge, this surface emitting laser on Si is the first to be operated under cw conditions.

• 社団法人応用物理学会の論文
• 1996-12-15

著者

• JIMBO Takashi

  Research Center for Micro-Structure Device, Nagoya Institute of Technology

• Umeno M

  Department Of Electronic Engineering Chubu University

• Umeno Masayoshi

  Department Of Electric And Computer Engineering Nagoya Institute Of Technology

• Egawa Takashi

  Research Center For Nano-device And System Nagoya Institute Of Technology

• NAKADA Naoyuki

  Department of Electrical and Computer Engineering, Nagoya Institute of Technology

• Nakada N

  Department Of Electrical And Computer Engineering Nagoya Institute Of Technology

• Umeno Masataka

  Department Of Material And Life Science Graduate School Of Engineering Osaka University

• Umeno M

  Department Of Management And Information Science Faculty Of Engineering Fukui University Of Technolo

• Umeno M

  Nagoya Inst. Technology

• MURATA Yoshihiko

  Department of Electrical and Computer Engineering, Nagoya Institute of Technology

• NAKANISHI Naoki

  Department of Electrical and Computer Engineering, Nagoya Institute of Technology

• Murata Yoshihiko

  Department Of Electrical And Computer Engineering Nagoya Institute Of Technology

• Egawa Takashi

  Research Center for Micro-Structure Devices, Nagoya Institute of Technology

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