Investigations on Strained AlGaN/GaN/Sapphire and GaInN Multi-Quantum-Well Surface LEDs Using AlGaN/GaN Bragg Reflectors(Special Issue on Blue Laser Diodes and Related Devices/Technologies)

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概要

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• Investigations were carried out on metalorganic-chemical-vapor-deposition (MOCVD)-grown strained AlGaN/GaN/sapphire structures using x-ray diffratometry. While AlGaN with lower AlN molar fraction (<0.1) is under the in-plane compressive stress, it is under the in-plane tensile stress with high AlN molar fraction (>0.1). Though tensile stress caused the cracks in AlGaN layer with high AlN molar fraction, we found that the cracks dramatically reduced when the GaN layer quality was not good. Using this technique, we fabricated a GaInN multi-quantum-well (MQW) surface emitting diodes were fabricated on 15 pairs of AlGaN/GaN distributed Bragg reflector (DBR) structures. The reflectivity of 15 pairs of AlGaN/GaN DBR structure has been shown as 75% at 435 nm. Considerably higher output power (1.5 times) has been observed for DBR based GaInN MQW LED when compared with non-DBR based MQW structures.

• 社団法人電子情報通信学会の論文
• 2000-04-25

著者

• Jimbo T

  Department Of Environment Technology And Urban Planning Nagoya Institute Of Technology

• Umeno M

  Department Of Electronic Engineering Chubu University

• Umeno Masayoshi

  Department Of Electronic And Computer Engineering Nagoya Institute Of Technology

• Umeno Masayoshi

  Department Of Electric And Computer Engineering Nagoya Institute Of Technology

• Umeno Masayoshi

  Department Of Electronic Mechanical Engineering Nagoya University

• Umeno M

  Fukui Univ. Technol. Fukui Jpn

• NAKADA Naoyuki

  Department of Electrical and Computer Engineering, Nagoya Institute of Technology

• Nakada N

  Department Of Electrical And Computer Engineering Nagoya Institute Of Technology

• Nishikawa H

  Osaka Univ. Osaka Jpn

• Ishikawa H

  Research Center For Nano-device And System Nagoya Institute Of Technology

• Umeno Masataka

  Department Of Material And Life Science Graduate School Of Engineering Osaka University

• Umeno Masataka

  Graduate School Of Engineering Osaka University

• Umeno Masayoshi

  Department Of Electronic Engineering Chubu University

• Zhao Guang-yuan

  Research Center For Micro-structure Devices Nagoya Institute Of Technology

• Ishikawa H

  Kddi R&d Laboratories Inc.

• ISHIKAWA Hiroyasu

  The authors are with Research Center for Micro-Structure Devices, Nagoya Institute of Technology

• NAKADA Naoyuki

  The authors are with the Department of Electrical and Computer Engineering, Nagoya Institute of Tech

• NAKAJI Masaharu

  The authors are with the Department of Electrical and Computer Engineering, Nagoya Institute of Tech

• ZHAO Guang-Yuan

  The authors are with the Department of Electrical and Computer Engineering, Nagoya Institute of Tech

• EGAWA Takashi

  The authors are with Research Center for Micro-Structure Devices, Nagoya Institute of Technology

• JIMBO Takashi

  The author is with the Department of Environmental Technology and Urban Planning, Nagoya Institute o

• UMENO Masayoshi

  The authors are with Research Center for Micro-Structure Devices, Nagoya Institute of Technology

• 趙 廣元

  名古屋工業大学・ベンチャー・ビジネス・ラボラトリー

• Nakaji Masaharu

  Department Of Electrical And Computer Engineering Nagoya Institute Of Technology

• Umeno M

  Department Of Management And Information Science Faculty Of Engineering Fukui University Of Technolo

• Umeno M

  Nagoya Inst. Technology

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