High-Frequency Property of AIGaN/GaN-HEMT with Recessed Gate

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概要

• 論文の詳細を見る
• 社団法人電子情報通信学会の論文
• 2003-04-01

著者

• JIMBO Takashi

  Nagoya Institute of Technology

• Jimbo T

  Department Of Environment Technology And Urban Planning Nagoya Institute Of Technology

• Jimbo T

  Research Center For Nano-device And System Nagoya Institute Of Technology

• Nishikawa H

  Osaka Univ. Osaka Jpn

• Ishikawa H

  Research Center For Nano-device And System Nagoya Institute Of Technology

• Shibata Tomohiko

  Rd Center Ngk Insulators Ltd.

• Murata T

  Matsushita Electric Industrial Co. Ltd.

• Jimbo Takashi

  Research Center For Micro-structure Devices Nagoya Institute Of Technology

• Egawa Takashi

  Nagoya Institute Of Technology

• Ishikawa H

  Kddi R&d Laboratories Inc.

• Mita Juro

  Corp.research & Development Center Oki Electric Industry Co. Ltd. : Ultra-low-loss Power Device

• Jimbo T

  Nagoya Inst. Technology Nagoya Jpn

• Okita Hideyuki

  Corp.research & Development Center Oki Electric Industry Co. Ltd.

• Ishikawa Hiroyasu

  Nagoya Inst. Of Technol. Nagoya Jpn

• SANO Yoshiaki

  Corp.Research & Development Center, Oki Electric Industry Co., Ltd.

• KAIFU Katsuaki

  Corp.Research & Development Center, Oki Electric Industry Co., Ltd.

• YAMADA Tomoyuki

  Corp.Research & Development Center, Oki Electric Industry Co., Ltd.

• MAKITA Takehiko

  Corp.Research & Development Center, Oki Electric Industry Co., Ltd.

• SAGIMORI Tomohiko

  Corp.Research & Development Center, Oki Electric Industry Co., Ltd.

• Sano Yoshiaki

  Corp.research & Development Center Oki Electric Industry Co. Ltd. : Ultra-low-loss Power Device

• Kaifu Katsuaki

  Corp.research & Development Center Oki Electric Industry Co. Ltd. : Ultra-low-loss Power Device

• Yamada Tomoyuki

  Corp.research & Development Center Oki Electric Industry Co. Ltd. : Ultra-low-loss Power Device

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