Effects of Growth Temperature and V/III Ratio on MOCVD-Grown GaAs-on-Si

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概要

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• Effects of growth temperature and V/III ratio on surface morphology, crystallinity and residual impurities of MOCVD-grown GaAs-on-Si have been studied. The effects are different from those on MOCVD-grown GaAs-on-GaAs. The difference arises from the heteroepitaxial problems. High silicon concentrations are found in all the GaAs-on-Si, and the electrical activation of silicon as a donor reaches 100% for higher growth temperatures. Crystallinity improves but surface morphology degrades with increasing growth temperature. The trade-off between crystallinity and surface morphology has been eliminated by the three-step growth process.

• 社団法人応用物理学会の論文
• 1990-01-20

著者

• SOGA Tetsuo

  Nagoya Institute of Technology

• JIMBO Takashi

  Nagoya Institute of Technology

• Soga T

  Department Of Environment Technology And Urban Planning Nagoya Institute Of Technology

• Umeno Masayoshi

  Nagoya Inst. Of Technology

• NOZAKI Shinji

  Department of Physical Electronics, Tokyo Institute of Technology

• Egawa Takashi

  Nagoya Institute Of Technology

• Nozaki S

  Univ. Electro‐communications Tokyo

• NOZAKI Shinji

  Nagoya Institute of Technology

• NOTO Nobuhiko

  Nagoya Institute of Technology

• WU Albert

  Intel Corporation

• Noto Nobuhiko

  Nagoya Institute Of Technology:shin-etsu Handotai.

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