Jimbo T | Research Center For Nano-device And System Nagoya Institute Of Technology

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著作論文

Structural Comparison between Ge and GaAs Films Grown by Molecular Beam Epitaxy on Si Substrate : Short Note
Influence of Structure and C_ Composition on Properties of Blends and Bilayers of Organic Donor-Acceptor Polymer/C_ Photovoltaic Devices
Boron-Incorporated Amorphous Carbon Films Deposited by Pulsed Laser Deposition : Semiconductors
Fabrication of a TiO_2-Based Solid-State Cell with an Organic Polymer as a Sensitizer : Optical Properties of Condensed Matter
Emission Properties of Electrodeless Argon Gas Discharge in VUV Region
Vacuum Ultraviolet Light Source Using Electrodeless Discharge
Vacuum Ultraviolet Detector
The physical and micro structural properties of PECVD grown amorphous carbon films on the contribution to n-C:P/p-Si solar cells
The annealing temperature effects on the synthesis of n-TiO_2/dye/p-CuI solid state solar cells
1 MeV electron irradiation effects on GaAs solar cell grown on Si substrate
1 MeV electron irradiation effects on GaAs solar cell grown on Si substrate
1 MeV electron irradiation effects on GaAs solar cell grown on Si substrate
The Deposition of a-C : H Films by Pulsed Laser Ablation
Characterization of Phosphorus-Doped Amorphous Carbon and Construction of n-Carbon/p-Silicon Heterojunction Solar Cells
Photovoltaic Properties of Boron-Incorporated Amorphous Carbon on n-Si Heterojunction Grown by Radio Frequency Plasma-Enhanced Chemical Vapor Deposition Using Trimethylboron
Effects of device passivation on AlGaN/GaN HEMTs using electron beam evaporated SiO2 and Si3N4 (Devices:先端デバイスの基礎と応用に関するアジアワークショップ)
High-Bright InGaN Multiple-Quantum-Well Blue Light-Emitting Diodes on Si (111) Using AlN/GaN Multilayers with a Thin AlN/AlGaN Buffer Layer
Suppression of Crack Generation in GaN/AlGaN Distributed Bragg Reflector on Sapphire by the Insertion of GaN/AlGaN Superlattice Grown by Metal-Organic Chemical Vapor Deposition
N/Ge Co-Implantation into GaN for N-Type Doping
N/Ge Co-Implantation into GaN for N-Type Doping
Suppression of GaInN/GaN Multi-Quantum-Well Decomposition during Growth of Light-Emitting-Diode Structure : Structure and Mechanical and Thermal Properties of Condensed Matter
Growth of 100-mm-Diameter AlGaN/GaN Heterostructures on Sapphire Substrates by MOVPE(Heterostructure Microelectronics with TWHM2003)
Correlation between Electrical and Surface Properties of n-GaN on Sapphire Grown by Metal-Organic Chemical Vapor Deposition
Realization of GaAS/AlGaAs Lasers on Si Substrates Using Epitaxial Lateral Overgrowth by Metalorganic Chemical Vapor Deposition : Optics and Quantum Electronics
Passivation of Bulk and Surface Defects in GaAs Grown on Si Substrate by Radio Frequency Phosphine/Hydrogen Plasma Exposure : Semiconductors
Low Noise and Low Distortion Performances of an AlGaN/GaN HFET(Heterostructure Microelectronics with TWHM2003)
High-Quality AlGaN/GaN HEMTs on Epitaxial AlN/Sapphire Templates(Heterostructure Microelectronics with TWHM2003)
High-Frequency Property of AIGaN/GaN-HEMT with Recessed Gate
Characteristics of BCl_3 Plasma-Etched GaN Schottky Diodes : Instrumentation, Measurement, and Fabrication Technology
GaN Metal-Semiconductor-Metal UV Photodetector with Recessed Electrodes : Semiconductors
High-Transconductance AlGaN/GaN High-Electron-Mobility Transistors on Semi-Insulating Silicon Carbide Substrate : Semiconductors

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