Kachi Tetsu | Toyota Central R & D Laboratories Inc.

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著作論文

Characteristics of GaN p-n diode with damage layer induced by ICP plasma process(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
N/Ge Co-Implantation into GaN for N-Type Doping
N/Ge Co-Implantation into GaN for N-Type Doping
GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching
Characteristics of GaN p-n diode with damage layer induced by ICP plasma process(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
Excess Carrier Lifetime Measurement for Plasma-Etched GaN by the Microwave Photoconductivity Decay Method
Excitation Spectra of the Visible Photoluminescence of Anodized Porous Silicon
New Approach to Low-Temperature Epitaxial Growth of GaAs by Photostimulated Metalorganic Chemical Vapor Deposition : Semiconductors and Semiconductor Devices
Recent Advances on GaN Vertical Power Devices(Session6: Power Devices)
Recent Advances on GaN Vertical Power Devices(Session6: Power Devices)
Recent Advances on GaN Power Devices
Interface Properties of Al2O3/n-GaN Structures with Inductively Coupled Plasma Etching of GaN Surfaces
FOREWORD
A Vertical Insulated Gate AlGaN/GaN Heterojunction Field-Effect Transistor
Improvement of Current Collapse by Surface Treatment and Passivation Layer in p-GaN Gate GaN High-Electron-Mobility Transistors
Reliability Evaluation of Al
Reliability Evaluation of Al₂O₃ Deposited by Ozone-Based Atomic Layer Deposition on Dry-Etched n-Type GaN (Special Issue : Recent Advances in Nitride Semiconductors)
N/Ge Co-Implantation into GaN for N-Type Doping
FOREWORD

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