A Vertical Insulated Gate AlGaN/GaN Heterojunction Field-Effect Transistor
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概要
- 論文の詳細を見る
We fabricated a vertical insulated gate AlGaN/GaN heterojunction field-effect transistor (HFET), using a free-standing GaN substrate. This HFET has apertures through which the electron current vertically flows. These apertures were formed by dry etching the p-GaN layer below the gate electrodes and regrowing n--GaN layer without mask. The HFET exhibited a specific on-resistance of as low as 2.6 m$\Omega$$\cdot$cm2 with a threshold voltage of $-16$ V. This HFET would be a prototype of a GaN-based high-power switching device.
- 2007-06-25
著者
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Uesugi Tsutomu
Toyota Central R&d Laboratories Inc.
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Kachi Tetsu
Toyota Central R & D Laboratories Inc.
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SUGIMOTO Masahiro
Toyota Motor Corp.
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Hayashi Eiko
Toyota Central R&d Laboratories Inc.
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Ishiguro Osamu
Toyota Central R&d Laboratories Inc.
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Soejima Narumasa
Toyota Central R&d Laboratories Inc.
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Kanechika Masakazu
Toyota Central R&d Laboratories Inc.
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Itoh Kenji
Toyota Central R&d Laboratories Inc.
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Ueda Hiroyuki
Toyota Central R&d Laboratories Inc.
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Kodama Masahito
Toyota Central R&D Laboratories, Inc., Nagakute-cho, Aichi 480-1192, Japan
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Hayashi Eiko
Toyota Central R&D Laboratories, Inc., Nagakute-cho, Aichi 480-1192, Japan
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Soejima Narumasa
Toyota Central R&D Laboratories, Inc., Nagakute-cho, Aichi 480-1192, Japan
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Kanechika Masakazu
TOYOTA Central R&D Laboratories, Inc., Nagakute-cho, Aichi 480-1192, Japan
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Sugimoto Masahiro
Toyota Motor Corp., 543 Kirigahora, Nishihirose-cho, Toyota, Aichi 470-0309, Japan
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Ishiguro Osamu
Toyota Central R&D Laboratories, Inc., Nagakute-cho, Aichi 480-1192, Japan
関連論文
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- FOREWORD
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- FOREWORD