Electrical Characterization of GaN p--n Junctions Grown on Freestanding GaN Substrates by Metal--Organic Chemical Vapor Deposition
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The electrical characteristics of GaN p--n junctions grown on freestanding GaN substrates by metal--organic chemical vapor deposition were investigated. The current--voltage ($I$--$V$) characteristics of the GaN p--n diode showed relatively low values and, little temperature dependence of the reverse leakage current. The breakdown voltage of the GaN p--n diode was 900 V and the leakage current at 600 V was 1 μA/cm2 or less. The inverse of squared capacitance--voltage ($1/C^{2}$--$V$) data showed a linear relationship, indicating an abrupt junction at the p--n interface. Little temperature dependence of the $C$--$V$ curve was also observed. Plasma etching before the growth of the p-GaN layer induced a large leakage current and a lower breakdown voltage, probably due to the disorder of atomic bonds and the nitrogen depletion at the plasma-etched surface. The insertion of a regrown n-GaN layer between the p-GaN and the plasma-treated n-GaN surface was effective in suppressing the leakage current and recovering the breakdown voltage.
- 2011-03-25
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