Reliability Evaluation of Al₂O₃ Deposited by Ozone-Based Atomic Layer Deposition on Dry-Etched n-Type GaN (Special Issue : Recent Advances in Nitride Semiconductors)

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概要

• 論文の詳細を見る

著者

• Uesugi Tsutomu

  Toyota Central R&d Laboratories Inc.

• Kachi Tetsu

  Toyota Central R & D Laboratories Inc.

• Kikuta Daigo

  Toyota Central R&D Labs. Inc., Nagakute, Aichi 480-1192, Japan

• Narita Tetsuo

  Toyota Central R&D Labs. Inc., Nagakute, Aichi 480-1192, Japan

• Kutsuki Katsuhiro

  Toyota Central R&D Labs., Inc., Nagakute, Aichi 480-1192, Japan

• Narita Tetsuo

  Toyota Central R&D Labs., Inc., Nagakute, Aichi 480-1192, Japan

• Kachi Tetsu

  Toyota Central R&D Labs., Inc., Nagakute, Aichi 480-1192, Japan

関連論文

• Characteristics of GaN p-n diode with damage layer induced by ICP plasma process(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
• N/Ge Co-Implantation into GaN for N-Type Doping
• N/Ge Co-Implantation into GaN for N-Type Doping
• Mechanism of Residue Formation in Silicon Trench Etching Using a Bromine-Based Plasma
• GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching
• Characteristics of GaN p-n diode with damage layer induced by ICP plasma process(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
• Excess Carrier Lifetime Measurement for Plasma-Etched GaN by the Microwave Photoconductivity Decay Method
• Excitation Spectra of the Visible Photoluminescence of Anodized Porous Silicon
• Electrical Characterization of GaN p--n Junctions Grown on Freestanding GaN Substrates by Metal--Organic Chemical Vapor Deposition
• Mechanism of Residue Formation in Silicon Trench Etching Using a Bromine-Based Plasma
• New Approach to Low-Temperature Epitaxial Growth of GaAs by Photostimulated Metalorganic Chemical Vapor Deposition : Semiconductors and Semiconductor Devices
• Recent Advances on GaN Vertical Power Devices(Session6: Power Devices)
• Recent Advances on GaN Vertical Power Devices(Session6: Power Devices)
• Recent Advances on GaN Power Devices
• Interface Properties of Al2O3/n-GaN Structures with Inductively Coupled Plasma Etching of GaN Surfaces
• FOREWORD
• A Vertical Insulated Gate AlGaN/GaN Heterojunction Field-Effect Transistor
• Improvement of Current Collapse by Surface Treatment and Passivation Layer in p-GaN Gate GaN High-Electron-Mobility Transistors
• Reliability Evaluation of Al
• Reliability Evaluation of Al₂O₃ Deposited by Ozone-Based Atomic Layer Deposition on Dry-Etched n-Type GaN (Special Issue : Recent Advances in Nitride Semiconductors)
• N/Ge Co-Implantation into GaN for N-Type Doping
• FOREWORD

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