Interface Properties of Al2O3/n-GaN Structures with Inductively Coupled Plasma Etching of GaN Surfaces

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概要

• 論文の詳細を見る

• The effects of the Cl2-based inductively coupled plasma (ICP) etching of GaN on the interface properties of Al2O3/GaN structures prepared by atomic layer deposition (ALD) were investigated. We used n-GaN layers grown on freestanding n+-GaN substrates with low dislocation density. The ICP etching caused slight disorder of the chemical bonds at the GaN surface and monolayer-level interface roughness at the Al2O3/GaN interface, resulting in poor capacitance--voltage (C--V) characteristics due to high-density interface states including nitrogen-vacancy (V\text{N) related levels. The postannealing process in N2 at 400 °C drastically improved the C--V characteristics, probably owing to the partial recovery of the V\text{N-related defects and the increased ordering of chemical bonds in the GaN surface region.

• 2012-06-25

著者

• Uesugi Tsutomu

  Toyota Central R&d Laboratories Inc.

• Kachi Tetsu

  Toyota Central R & D Laboratories Inc.

• HASHIZUME Tamotsu

  Graduate School of Electronics and Information Engineering, and Research Center for Interface Quantu

• Kachi Tetsu

  Toyota Central R&D Labs. Inc., Nagakute, Aichi 480-1192, Japan

• Iguchi Hiroko

  Toyota Central R&D Labs. Inc., Nagakute, Aichi 480-1192, Japan

• Kim Sungsik

  Graduate School of Information and Science Technology and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Sapporo 060-8628, Japan

• Hori Yujin

  Graduate School of Information and Science Technology and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Sapporo 060-8628, Japan

• Ma Wang-Cheng

  Graduate School of Information and Science Technology and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Sapporo 060-8628, Japan

• Kikuta Daigo

  Toyota Central R&D Labs. Inc., Nagakute, Aichi 480-1192, Japan

• Narita Tetsuo

  Toyota Central R&D Labs. Inc., Nagakute, Aichi 480-1192, Japan

• Kikuta Daigo

  Toyota Central R&D Labs. Inc., Nagakute, Aichi 480-1192, Japan

• Narita Tetsuo

  Toyota Central R&D Labs. Inc., Nagakute, Aichi 480-1192, Japan

• Hashizume Tamotsu

  Graduate School of Electronics and Information Engineering and Research Center for

関連論文

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• N/Ge Co-Implantation into GaN for N-Type Doping
• Mechanism of Residue Formation in Silicon Trench Etching Using a Bromine-Based Plasma
• GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching
• Characteristics of GaN p-n diode with damage layer induced by ICP plasma process(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
• 0.86 eV Platinum Schottky Barrier on Indium Phosphide by In Situ Electrochemical Process and Its Application to MESFETs
• Excess Carrier Lifetime Measurement for Plasma-Etched GaN by the Microwave Photoconductivity Decay Method
• Excitation Spectra of the Visible Photoluminescence of Anodized Porous Silicon
• Electrical Characterization of GaN p--n Junctions Grown on Freestanding GaN Substrates by Metal--Organic Chemical Vapor Deposition
• Mechanism of Residue Formation in Silicon Trench Etching Using a Bromine-Based Plasma
• New Approach to Low-Temperature Epitaxial Growth of GaAs by Photostimulated Metalorganic Chemical Vapor Deposition : Semiconductors and Semiconductor Devices
• Recent Advances on GaN Vertical Power Devices(Session6: Power Devices)
• Recent Advances on GaN Vertical Power Devices(Session6: Power Devices)
• Recent Advances on GaN Power Devices
• Capacitance--Voltage Characteristics of Al2O3/AlGaN/GaN Structures and State Density Distribution at Al2O3/AlGaN Interface
• Effects of Surface Oxidation of AlGaN on DC Characteristics of AlGaN/GaN High-Electron-Mobility Transistors
• Interface Properties of Al2O3/n-GaN Structures with Inductively Coupled Plasma Etching of GaN Surfaces
• Formation of Recessed-Oxide Gate for Normally-Off AlGaN/GaN High Electron Mobility Transistors Using Selective Electrochemical Oxidation
• FOREWORD
• Effects of Cl?-Based Inductively Coupled Plasma Etching of AlGaN on Interface Properties of Al?O?/AlGaN/GaN Heterostructures
• Impact of Gate and Passivation Structures on Current Collapse of AlGaN/GaN High-Electron-Mobility Transistors under Off-State-Bias Stress
• A Vertical Insulated Gate AlGaN/GaN Heterojunction Field-Effect Transistor
• Improvement of Current Collapse by Surface Treatment and Passivation Layer in p-GaN Gate GaN High-Electron-Mobility Transistors
• Temperature-Dependent Interface-State Response in an Al2O3/n-GaN Structure
• 0.86 eV Platinum Schottky Barrier on Indium Phosphide by In Situ Electrochemical Process and Its Application to MESFETs
• Reliability Evaluation of Al
• Process Conditions for Improvement of Electrical Properties of Al2O3/n-GaN Structures Prepared by Atomic Layer Deposition
• Reliability Evaluation of Al₂O₃ Deposited by Ozone-Based Atomic Layer Deposition on Dry-Etched n-Type GaN (Special Issue : Recent Advances in Nitride Semiconductors)
• Deep Level and Conduction Mechanism in Low-Temperature GaAs Grown by Molecular Beam Epitaxy
• N/Ge Co-Implantation into GaN for N-Type Doping
• FOREWORD
• Effects of Cl_2-Based Inductively Coupled Plasma Etching of AlGaN on Interface Properties of Al_2O_3/AlGaN/GaN Heterostructures

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