HASHIZUME Tamotsu | Graduate School of Electronics and Information Engineering, and Research Center for Interface Quantu
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概要
- 同名の論文著者
- Graduate School of Electronics and Information Engineering, and Research Center for Interface Quantuの論文著者
関連著者
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HASHIZUME Tamotsu
Graduate School of Electronics and Information Engineering, and Research Center for Interface Quantu
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Hashizume Tamotsu
Graduate School of Electronics and Information Engineering and Research Center for
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Kasai Seiya
Graduate School Of Information Science And Technology And Research Center For Integrated Quantum Ele
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Hori Yujin
Graduate School of Information and Science Technology and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Sapporo 060-8628, Japan
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葛西 誠也
Research Center For Integrated Quantum Electronics And Graduate School Of Information Science And Te
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Wu N‐j
Hokkaido Univ. Sapporo Jpn
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Wu N‐j
Univ. Aizu Fukushima Jpn
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Uesugi Tsutomu
Toyota Central R&d Laboratories Inc.
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Kachi Tetsu
Toyota Central R & D Laboratories Inc.
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Wu Nan-jian
The University Of Electro-communications
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HASEGAWA Hideki
Graduate School of Electronics and Information Engineering and Research Center for Integrated Quantu
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KASAI Seiya
Graduate School of Information Science and Technology, Hokkaido University
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UNO Shouichi
Graduate School of Electronics and Information Engineering, and Research Center for Interface Quantu
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WU Nan-Jian
Graduate School of Electronics and Information Engineering, and Research Center for Interface Quantu
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Uno Shouichi
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Kato Hiroki
Graduate School Of Engineering Gunma University
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Wu Nan-Jian
Graduate School of Electronics and Information Engineering, and Research Center
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Kachi Tetsu
Toyota Central R&D Labs. Inc., Nagakute, Aichi 480-1192, Japan
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Iguchi Hiroko
Toyota Central R&D Labs. Inc., Nagakute, Aichi 480-1192, Japan
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Kim Sungsik
Graduate School of Information and Science Technology and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Sapporo 060-8628, Japan
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Ma Wang-Cheng
Graduate School of Information and Science Technology and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Sapporo 060-8628, Japan
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Kikuta Daigo
Toyota Central R&D Labs. Inc., Nagakute, Aichi 480-1192, Japan
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Narita Tetsuo
Toyota Central R&D Labs. Inc., Nagakute, Aichi 480-1192, Japan
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Kikuta Daigo
Toyota Central R&D Labs. Inc., Nagakute, Aichi 480-1192, Japan
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Narita Tetsuo
Toyota Central R&D Labs. Inc., Nagakute, Aichi 480-1192, Japan
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Hasegawa Hideki
Graduate School of Electronics and Information Engineering and Research Center for
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Hasegawa Hideki
Graduate School of Electronics and Information Engineering, and Research Center
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Miczek Marcin
Graduate School of Information Science and Technology and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Sapporo 060-8628, Japan
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Miczek Marcin
Silesian University of Technology, Institute of Physics, Department of Applied Physics, Krzywoustego 2, 44-100 Gliwice, Poland
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Mizue Chihoko
Graduate School of Information and Science Technology and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Sapporo 060-8628, Japan
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Ooyama Kimihito
Graduate School of Information Science and Technology and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Sapporo 060-8628, Japan
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Uno Shouichi
Graduate School of Electronics and Information Engineering, and Research Center
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Hashizume Tamotsu
Graduate School of Electronics and Information Engineering, and Research Center
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Kasai Seiya
Graduate School of Electronics and Information Engineering, and Research Center
著作論文
- 0.86 eV Platinum Schottky Barrier on Indium Phosphide by In Situ Electrochemical Process and Its Application to MESFETs
- Capacitance--Voltage Characteristics of Al2O3/AlGaN/GaN Structures and State Density Distribution at Al2O3/AlGaN Interface
- Interface Properties of Al2O3/n-GaN Structures with Inductively Coupled Plasma Etching of GaN Surfaces
- Temperature-Dependent Interface-State Response in an Al2O3/n-GaN Structure
- 0.86 eV Platinum Schottky Barrier on Indium Phosphide by In Situ Electrochemical Process and Its Application to MESFETs