Temperature-Dependent Interface-State Response in an Al2O3/n-GaN Structure
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概要
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With a combination of the static capacitance-voltage (C-V) and the capacitance transient (C-t) methods, the interface-state response in an Al2O3/n-GaN structure was investigated at temperatures ranging from 23 to 300℃. We observed pronounced degradation of the static C-V curves measured at high temperatures, arising from the enhancement of charging/discharging rates of interface states at deeper energies within the bandgap of GaN. Faster responses with larger magnitudes also appeared in the time-dependent capacitance at high temperatures. From a simple analysis of the C-t results, we estimated the capture cross section of the states to be on the order of 10^[-19]cm^[2].
- Japan Society of Applied Physicsの論文
- 2008-07-25
著者
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HASHIZUME Tamotsu
Graduate School of Electronics and Information Engineering, and Research Center for Interface Quantu
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Kato Hiroki
Graduate School Of Engineering Gunma University
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Miczek Marcin
Graduate School of Information Science and Technology and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Sapporo 060-8628, Japan
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Ooyama Kimihito
Graduate School of Information Science and Technology and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Sapporo 060-8628, Japan
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Hashizume Tamotsu
Graduate School of Electronics and Information Engineering and Research Center for
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