Uesugi Tsutomu | Toyota Central R&d Laboratories Inc.
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概要
関連著者
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Uesugi Tsutomu
Toyota Central R&d Laboratories Inc.
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Kachi Tetsu
Toyota Central R & D Laboratories Inc.
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Uesugi Tsutomu
Toyota Central R&d Labs. Inc.
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Kachi Tetsu
Toyota Central R&D Labs., Inc.
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Kanechika Masakazu
Toyota Central R&d Laboratories Inc.
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Itoh Kenji
Toyota Central R&d Laboratories Inc.
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Kikuta Daigo
Toyota Central R&D Labs. Inc., Nagakute, Aichi 480-1192, Japan
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Narita Tetsuo
Toyota Central R&D Labs. Inc., Nagakute, Aichi 480-1192, Japan
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Hashizume Tamotsu
Rcieq Hokkaido University
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Hayakawa Tetsuo
Toyota Central R&d Labs. Inc.:(present Address) Nanotech Laboratory Canare Electric Co. Ltd.
著作論文
- Characteristics of GaN p-n diode with damage layer induced by ICP plasma process(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
- Mechanism of Residue Formation in Silicon Trench Etching Using a Bromine-Based Plasma
- GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching
- Characteristics of GaN p-n diode with damage layer induced by ICP plasma process(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
- Electrical Characterization of GaN p--n Junctions Grown on Freestanding GaN Substrates by Metal--Organic Chemical Vapor Deposition
- Mechanism of Residue Formation in Silicon Trench Etching Using a Bromine-Based Plasma
- Interface Properties of Al2O3/n-GaN Structures with Inductively Coupled Plasma Etching of GaN Surfaces
- A Vertical Insulated Gate AlGaN/GaN Heterojunction Field-Effect Transistor
- Improvement of Current Collapse by Surface Treatment and Passivation Layer in p-GaN Gate GaN High-Electron-Mobility Transistors
- Reliability Evaluation of Al