Uesugi Tsutomu | Toyota Central R&d Laboratories Inc.

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概要

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著作論文

Characteristics of GaN p-n diode with damage layer induced by ICP plasma process(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
Mechanism of Residue Formation in Silicon Trench Etching Using a Bromine-Based Plasma
GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching
Characteristics of GaN p-n diode with damage layer induced by ICP plasma process(Session 6B : Wide Bandgap Materials and Devices, Power Devices)
Electrical Characterization of GaN p--n Junctions Grown on Freestanding GaN Substrates by Metal--Organic Chemical Vapor Deposition
Mechanism of Residue Formation in Silicon Trench Etching Using a Bromine-Based Plasma
Interface Properties of Al2O3/n-GaN Structures with Inductively Coupled Plasma Etching of GaN Surfaces
A Vertical Insulated Gate AlGaN/GaN Heterojunction Field-Effect Transistor
Improvement of Current Collapse by Surface Treatment and Passivation Layer in p-GaN Gate GaN High-Electron-Mobility Transistors
Reliability Evaluation of Al
Reliability Evaluation of Al₂O₃ Deposited by Ozone-Based Atomic Layer Deposition on Dry-Etched n-Type GaN (Special Issue : Recent Advances in Nitride Semiconductors)

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