Kanechika Masakazu | Toyota Central R&d Laboratories Inc.

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著作論文

GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching
Dependence of Tip Depth of Silicon Needles on Fabrication Process Conditions
Silicon Needles Fabricated by Highly Selective Anisotropic Dry Etching and Their Field Emission Current Characteristics
A Gated Field Emission Triode Using Silicon Needles Fabricated by Highly Selective Anisotropic Dry Etching
Excess Carrier Lifetime Measurement for Plasma-Etched GaN by the Microwave Photoconductivity Decay Method
A Vertical Insulated Gate AlGaN/GaN Heterojunction Field-Effect Transistor
Improvement of Current Collapse by Surface Treatment and Passivation Layer in p-GaN Gate GaN High-Electron-Mobility Transistors
Dependence of Tip Depth of Silicon Needles on Fabrication Process Conditions

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