Arai E | Nagoya Inst. Technol. Nagoya Jpn

スポンサーリンク

概要

関連著者

もっと見る

著作論文

Slow Decay of Excess Carrier Concentration in Bonded Silicon-on-Insulator Wafers
Control of Surface Recombination of Si Wafers by an External Electrode
Configuration of a Manufacturing Line for Mixed Production of Ultra-Short TAT LSIs and Low-Cost LSIs
Fraction of Interstitialcy Component of Phosphorus and Antimony Diffusion in Silicon
Fraction of Interstitialcy Component of Phosphorus and Antimony Diffusion in Silicon
Deep Level Study in Heteroepitaxial 3C-SiC Grown on Si by Hexamethyldisilane : Electrical Properties of Condensed Matter
Passivation of Deep Levels in 3C-SiC on Si by a Hydrogen Plasma Treatment
Search for Midgap Levels in 3C-SiC Grown on Si Substrates
Study of Carrier Emission and Capture Processes at Electron Traps in 3C-SiC
Excess Carrier Lifetime Measurement for Plasma-Etched GaN by the Microwave Photoconductivity Decay Method
Sacrificial Anodic Oxidation of 6H-SiC : Semiconductors
An On-Line Scheduler for ASIC Manufacturing Line Management
A Flexible and Low-Cost ASIC Line Management Technology Taking Operator's Skill-Level as a Scheduling-Factor into Consideration
A Scalable and Flexible CIM System with Precise and Quick Scheduler for ASIC

もっと見る

スポンサーリンク