Okumura Tsugunori | Department Of Electrical And Electronic Engineering Graduate School Of Science And Engineering Tokyo
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- OKUMURA Tsugunoriの詳細を見る
- 同名の論文著者
- Department Of Electrical And Electronic Engineering Graduate School Of Science And Engineering Tokyoの論文著者
関連著者
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Okumura Tsugunori
Department Of Electrical And Electronic Engineering Graduate School Of Science And Engineering Tokyo
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OKUMURA Tsugunori
Department of Electronics and Information Engineering, Tokyo Metropolitan University
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Suhara Michihiko
Department Of Electrical And Electronic Engineering Graduate School Of Science And Engineering Tokyo
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TOMIOKA Hiroto
Department of Electrical and Electronic Engineering, Graduate School of Science and Engineering, Tok
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Tomioka Hiroto
Department Of Electrical And Electronic Engineering Graduate School Of Science And Engineering Tokyo
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Kaibe Hiromasa
Department Of Electrical Engineering Tokyo Metropolitan University
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Okumura Tsugunori
Department Of Electrical Engineering Tokyo Metropolitan University
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Lin Tsai-cheng
Department Of Electronics And Information Engineering Tokyo Metropolitan University
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Tokuda Yutaka
Depertment Of Electronics Aichi Institute Of Technology
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Shimura Michiko
Department Of Industrial Chemistry Faculty Of Technology Tokyo Metropolitan University
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Shimura Michiko
Department Of Electronics And Information Faculty Of Engineering Tokyo Metropolitan University
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Kaibe H
Research Center Komatsu Ltd.
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Shiojima Kenji
Department Of Electrical Engineering Tokyo Metropolitan University
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YAMADA Noboru
Power Device Laboratory, Electronic Device Division, Toyota Central Research and Development Laborat
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Sobue Fumitaka
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Okumura Tsugunori
Department Of Electronics And Information Engineering Tokyo Metropolitan University
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Arai Eisuke
Department Of Electrical Ad Computer Engineering Nagoya Institute Of Technology
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Ichimura Masaya
Department Of Electrical & Computer Engineering Nagoya Institute Of Technology
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Shinagawa Tatsuyuki
Department Of Electrical Engineering Tokyo Metropolitan University
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Kato Masashi
Department Of Applied Biological Chemistry Faculty Of Agriculture Meijo University
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Kinoshita Akira
長崎大学 医歯薬学総合研究科人類遺伝学
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Kinoshita Akira
長崎大学 医歯薬学研究科人類遺伝学
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田中 皓一
名古屋工業大学
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SATO Yoshikazu
Department of Urology, Sanjukai Hospital
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KATO Masashi
Department of Engineering Physics, Electronics and Mechanics, Nagoya Institute of Technology
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ICHIMURA Masaya
Department of Engineering Physics, Electronics and Mechanics, Nagoya Institute of Technology
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Kato Masatune
Department Of Physics Faculty Of Science Hiroshima University
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MORIMOTO Jun
Department of Materials Science and Engineering, National Defense Academy
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Yoneda Seiji
Kanagawa University
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Morimoto J
Department Of Materials Science And Engineering National Defense Academy
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Kinoshita A
Tokyo Denki Univ. Hiki Jpn
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Nishida I
Salesian Polytechnic
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Tanaka Y
Department Of Surgery Tokai University School Of Medicine
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Kato M
Toyota Central R&d Laboratories Inc.
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Hu Chenming
Department Of Electrical Engineering & Computer Sciences University Of California
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Tokuda Y
Aichi Inst. Technol. Toyota Jpn
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Tokuda Yutaka
Department Of Surgery Tokai University School Of Medicine
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ARAI Eisuke
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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Arai E
Department Of Engineering Physics Electronics And Mechanics Nagoya Institute Of Technology
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Arai E
Nagoya Inst. Technol. Nagoya Jpn
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OKAMOTO Yoichi
Department of Materials Science and Engineering, National Defense Academy
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KAWAHARA Toshio
Department of Materials Science and Engineering, National Defense Academy
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KIMURA Akitsugu
Department of Materials Science and Engineering, National Defense Academy
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YONEDA Seiji
Department of Electronics and Information Engineering, Tokyo Metropolitan University
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KAIBE Hiromasa
Department of Electronics and Information Engineering, Tokyo Metropolitan University
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IMAI Yoshio
National Research Institute for Metals
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NISHIDA Isao
National Research Institute for Metals
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Tanaka K
Nhk Science And Technical Research Lab. Tokyo Jpn
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Tanaka Kazunobu
Joint Research Center For Atom Technology(jrcat):university Of Tsukuba Institute Of Material Science
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YAMAMOTO SHIN-ICHI
Department of Anesthesiology, Keio University School of Medicine
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Kato M
Japan Atomic Energy Res. Inst. Ibaraki Jpn
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Kato Masatsune
Department Of Applied Physics Faculty Of Engineering Tohoku University
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NINOMIYA Makoto
Department of Pediatrics, Faculty of Medicine, Kagoshima University
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SHIOTA Ichiro
Kogakuin University
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SHINOHARA Yoshikazu
IMRAM, Tohoku University
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NISHIDA Isao
Salesian Polytechnic
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SHIMAZAKI Yoshiki
LSI Design & Development Center, Asahi Kasei Microsystems Co. Ltd.
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YAMADA Norihide
Hewlett-Packard Laboratories
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Tanaka Yasuhiko
Department Of Ophthalmology School Of Medicine Keio University
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Kawahara Toshio
Department Of Materials Science And Engineering National Defense Academy
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Isoda Y
Energy Conversion Materials Research Group National Institute For Materials Science
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MIYAKAWA Toru
Department of Materials Science and Engineering, The National Defense Academy
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MIYAKAWA Toru
Dept. of Materials Science and Engineering, National Defense Academy
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Miyakawa T
Dept. Of Materials Science And Engineering National Defense Academy
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Sato Y
Toshiba Corp. Kawasaki Jpn
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Morimoto Jun
Department Of Applied Physics National Defense Academy
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Yamada N
Matsushita Electric Industrial Co. Ltd. Osaka Jpn
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Okamoto Y
Department Of Materials Science And Engineering National Defense Academy
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Shimura M
Tokyo Metropolitan Univ. Tokyo
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Kato M
Advanced Research Laboratory Hitachi Ltd.
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KATSUMA Minoru
Department of Electronics and Information, Faculty of Engineering, Tokyo Metropolitan University
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Miyakawa Toru
Department Of Applied Physics The National Defense Academy
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Okamoto Yoichi
Department Of Applied Physics National Defense Academy
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Shiojima K
Department Of Electrical Engineering Tokyo Metropolitan University
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Lin T‐c
Department Of Electronics And Information Engineering Tokyo Metropolitan University
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LIN Tsai-Cheng
Department of Electronics and Information Engineering, Tokyo Metropolitan University
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SOBUE Fumitaka
Department of Electrical and Computer Engineering, Nagoya Institute of Technology
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Okumura T
Tokyo Metropolitan Univ. Tokyo Jpn
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SHINAGAWA Tatsuyuki
Department of Electrical Engineering, Tokyo Metropolitan University
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Ninomiya Makoto
Department Of Materials Science And Engineering National Defense Academy
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Katsuma Minoru
Department Of Electronics And Information Faculty Of Engineering Tokyo Metropolitan University
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Ichimura M
Department Of Engineering Physics Electronics And Mechanics Nagoya Institute Of Technology
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Tokuda Yutaka
Department Of Breast And Endocrine Surgery Tokai University School Of Medicine
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Kato Masashi
Department Of Bioenvironmental Medicine Graduate School Of Medicine Chiba University
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Yamada N
Yonezawa Women's College Of Yamagata Prefecture
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Okumura Tsugunori
Department Of Electronics And Information Faculty Of Engineering Tokyo Metropolitan University
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Ichimura Masaya
Department Of Electrical Ad Computer Engineering Nagoya Institute Of Technology
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Yamamoto Shin-ichi
Department Of Anesthesiology Keio University School Of Medicine
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Tanaka K
National Institute For Fusion Science
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Shinohara Yoshikazu
Imram Tohoku University
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Sato Yoshikazu
Department Of Urology Sapporo Medical University School Of Medicine
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Iida Masahiro
Department Of Electrical Engineering Tokyo Metropolitan University
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KAMOHARA Shiro
Renesas Electronics Corp.
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Shibata Takeshi
Department Of Electrical Engineering Tokyo Metropolitan University
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Suhara Michihiko
Department Of Electrical Engineering Tokyo Metropolitan University
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Kinoshita Akira
Department Of Human Genetics Nagasaki University Graduate School Of Biomedical Sciences
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Sato Yoshikazu
Department Of Fisheries Faculty Of Agriculture Tohoku University
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Kimura Akitsugu
Department Of Materials Sciene And Engineering National Defense Academy
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Eguchi Kazuyoshi
Department Of Electrical Engineering Tokyo Metropolitan University
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En Aimin
Department Of Electrical Engineering Tokyo Metropolitan University
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Kato Masashi
Department Of Applied Biological Chemistry Fuculty Of Agriculture Meijo University
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Hu Chenming
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720, U.S.A.
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Arai Eisuke
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
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Kato Masashi
Department of Applied Physics, Graduate School of Engineering, Tohoku University
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Moniwa Masahiro
Renesas Technology Corporation, 751 Horiguchi, Hitachinaka, Ibaraki 312-8504, Japan
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Kato Masashi
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
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Kimura Akitsugu
Department of Human Genetics, Nagasaki University Graduate School of Biomedical Sciences
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Okumura Tsugunori
Department of Electrical Engineering, Tokyo Metropolitan University, Minami-ohsawa, Hachiohji, Tokyo 192-0397, Japan
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Okumura Tsugunori
Department of Electrical and Electronic Engineering, Tokyo Metropolitan University, 1-1 Minami-ohsawa, Hachioji, Tokyo 192-0397, Japan
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OKUMURA Tsugunori
Department of Electrical Engineering, Tokyo Metropolitan University
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SHIMURA Michiko
Department of Electronics and Information Engineering, Tokyo Metropolitan University
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Ichimura Masaya
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
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Tokuda Yutaka
Depertment of Electronics, Aichi Institute of Technology, Yakusa, Toyota 470-0392, Japan
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Kubota Katsuhiko
Renesas Technology Corporation, 751 Horiguchi, Hitachinaka, Ibaraki 312-8504, Japan
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Kamohara Shiro
Renesas Technology Corporation, 751 Horiguchi, Hitachinaka, Ibaraki 312-8504, Japan
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Kamohara Shiro
Yield Management Department, Process Technology Development Division, Renesas Technology Corporation, Hitachinaka, Ibaraki 312-8504, Japan
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Lin Tsai-Cheng
Department of Electronics and Information Engineering, Tokyo Metropolitan University,
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Okumura Tsugunori
Department of Electrical Engineering, Tokyo Metropolitan University, 1-1 Minami-ohsawa, Hachiohji, Tokyo 192-0397, Japan
著作論文
- PbSnTe系化合物半導体溶製材料および焼結材料の熱電特性
- Size Effects on Photoacoustic Spectra for GaAs Fine Powder
- GaAs Schottky Diodes with Ideality Factor of Unity Fabricated by In Situ Photoelectrochemical Process
- Stabilization of Photoluminescence of Porous Silicon with Nonaqueous Anodic Oxidation
- Characterization of Annealed Low-Temperature GaAs Layers Grown by Molecular Beam Epitaxy with n-i-n Structure
- Passivation of Deep Levels in 3C-SiC on Si by a Hydrogen Plasma Treatment
- Role of the EL2 Center on the Formatiorn of Metastable Hydrogen-related Defects (M3/M4) in n-GaAs
- Scanning Internal-Photoemission Microscopy : New Mapping Technique to Characterize Electrical Inhomogeneity of Metal-Semiconductor Interface
- Improvement in Spatial Resolution of Infrared Scanning Internal-Photoemission Microscope
- Low-Temperature Fluorination of GaAs Surface by CF_4 Plasma
- Low Barrier Height and Nonuniformity in Al Schottky Contacts on Chemically Etched n-GaAs : Semiconductors and Semiconductor Devices
- Broadband Equivalent Circuit Modeling of Self-Complementary Bow-Tie Antennas Monolithically Integrated with Semiconductors for Terahertz Applications
- Effects of Geometrical Structures on Broadband Characteristics in Finite-Sized On-Chip Self-Complementary Antennas(Session 9B Emerging Devices and Technologies III,AWAD2006)
- Effects of Geometrical Structures on Broadband Characteristics in Finite-Sized On-Chip Self-Complementary Antennas(Session 9B Emerging Devices and Technologies III)
- Effects of Geometrical Structures on Broadband Characteristics in Finite-Sized On-Chip Self-Complementary Antennas
- Dominant Deep Level in Annealed Low-Temperature GaAs Layers Grown by Molecular Beam Epitaxy
- Contactless Method for Electrical Characterization of Silicon-on-Insulator Materials : Semiconductors
- Deep-Trap Stress Induced Leakage Current Model for Nominal and Weak Oxides
- Passivation of Deep Levels in 3C-SiC on Si by a Hydrogen Plasma Treatment
- Statistical p–n Junction Leakage Model via Trap Level Fluctuation for Refresh-Time-Oriented Dynamic Random Access Memory Design
- Characterization of Annealed Low-Temperature GaAs Layers Grown by Molecular Beam Epitaxy with n-i-n Structure
- Role of the EL2 Center on the Formation of Metastable Hydrogen-related Defects (M3/M4) in n-GaAs