Effects of Geometrical Structures on Broadband Characteristics in Finite-Sized On-Chip Self-Complementary Antennas(Session 9B Emerging Devices and Technologies III,AWAD2006)
スポンサーリンク
概要
- 論文の詳細を見る
Broadband characteristics micrometer-sized on-chip bow-tie antennas are examined in terahertz region. We simulate effects of central geometrical feeding structure on frequency independence and upper limit frequency of broadband radiation region. It is found that the micrometer-sized bow-tie antennas can reveal frequency independent characteristic up to several THz and the upper limit frequency of the radiation region depends on the feeding structure and the inner geometrical structure. The vertical feeding structure is found to be sensitive to feeding pad size resulting narrower broadband than the lateral feeding structure when the feeding electrode pad size is in the order of several tens μm.
- 社団法人電子情報通信学会の論文
- 2006-06-26
著者
-
Okumura Tsugunori
Department Of Electrical And Electronic Engineering Graduate School Of Science And Engineering Tokyo
-
Suhara Michihiko
Department Of Electrical And Electronic Engineering Graduate School Of Science And Engineering Tokyo
-
TOMIOKA Hiroto
Department of Electrical and Electronic Engineering, Graduate School of Science and Engineering, Tok
-
Tomioka Hiroto
Department Of Electrical And Electronic Engineering Graduate School Of Science And Engineering Tokyo
関連論文
- PbSnTe系化合物半導体溶製材料および焼結材料の熱電特性
- Size Effects on Photoacoustic Spectra for GaAs Fine Powder
- Nanostrueture Alignment for Hot Electron Interference/Diffraction Devices
- GaAs Schottky Diodes with Ideality Factor of Unity Fabricated by In Situ Photoelectrochemical Process
- Stabilization of Photoluminescence of Porous Silicon with Nonaqueous Anodic Oxidation
- Characterization of Annealed Low-Temperature GaAs Layers Grown by Molecular Beam Epitaxy with n-i-n Structure
- Passivation of Deep Levels in 3C-SiC on Si by a Hydrogen Plasma Treatment
- Role of the EL2 Center on the Formatiorn of Metastable Hydrogen-related Defects (M3/M4) in n-GaAs
- Evaluation of Hot Electron Coherent Length Using Well Width Dependence of the Resonance Characteristics of Resonant Tunneling Diodes
- Estimation of Phase Coherent Length of Hot Electrons in GaInAs Using Resonant Tunneling Diodes
- Scanning Internal-Photoemission Microscopy : New Mapping Technique to Characterize Electrical Inhomogeneity of Metal-Semiconductor Interface
- Improvement in Spatial Resolution of Infrared Scanning Internal-Photoemission Microscope
- Equivalent Circuit Model of Triple-Barrier Resonant Tunneling Diodes Monolithically Integrated with Bow-Tie Antennas and Analysis of Rectification Properties towards Ultra Wideband Terahertz Detections
- Possibility of High-Temperature Evaluation of Phase Coherent Length of Hot Electrons in Triple-Barrier Resonant Tunneling Diodes
- Analysis of low loss and wideband characteristics for monolithic isolators using resonant tunneling diodes(Session 3A : Emerging Device Technology 2)
- Analysis of low loss and wideband characteristics for monolithic isolators using resonant tunneling diodes(Session 3A : Emerging Device Technology 2)
- Low-Temperature Fluorination of GaAs Surface by CF_4 Plasma
- Low Barrier Height and Nonuniformity in Al Schottky Contacts on Chemically Etched n-GaAs : Semiconductors and Semiconductor Devices
- Broadband Equivalent Circuit Modeling of Self-Complementary Bow-Tie Antennas Monolithically Integrated with Semiconductors for Terahertz Applications
- Effects of Geometrical Structures on Broadband Characteristics in Finite-Sized On-Chip Self-Complementary Antennas(Session 9B Emerging Devices and Technologies III,AWAD2006)
- Effects of Geometrical Structures on Broadband Characteristics in Finite-Sized On-Chip Self-Complementary Antennas(Session 9B Emerging Devices and Technologies III)
- Effects of Geometrical Structures on Broadband Characteristics in Finite-Sized On-Chip Self-Complementary Antennas
- Dominant Deep Level in Annealed Low-Temperature GaAs Layers Grown by Molecular Beam Epitaxy
- Contactless Method for Electrical Characterization of Silicon-on-Insulator Materials : Semiconductors
- Deep-Trap Stress Induced Leakage Current Model for Nominal and Weak Oxides
- Passivation of Deep Levels in 3C-SiC on Si by a Hydrogen Plasma Treatment
- Statistical p–n Junction Leakage Model via Trap Level Fluctuation for Refresh-Time-Oriented Dynamic Random Access Memory Design
- Characterization of Annealed Low-Temperature GaAs Layers Grown by Molecular Beam Epitaxy with n-i-n Structure
- Role of the EL2 Center on the Formation of Metastable Hydrogen-related Defects (M3/M4) in n-GaAs