Characterization of Annealed Low-Temperature GaAs Layers Grown by Molecular Beam Epitaxy with n-i-n Structure
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1996-03-15
著者
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OKUMURA Tsugunori
Department of Electronics and Information Engineering, Tokyo Metropolitan University
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Lin T‐c
Department Of Electronics And Information Engineering Tokyo Metropolitan University
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LIN Tsai-Cheng
Department of Electronics and Information Engineering, Tokyo Metropolitan University
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Okumura Tsugunori
Department Of Electrical And Electronic Engineering Graduate School Of Science And Engineering Tokyo
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Okumura Tsugunori
Department Of Electronics And Information Engineering Tokyo Metropolitan University
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Lin Tsai-cheng
Department Of Electronics And Information Engineering Tokyo Metropolitan University
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