Passivation of Deep Levels in 3C-SiC on Si by a Hydrogen Plasma Treatment
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概要
- 論文の詳細を見る
It is discovered for the first time that deep levels in n-type 3C-SiC/Si are passivated by hydrogen. Hydrogen is introduced by a plasma treatment, and its effects are investigated by deep level transient spectroscopy (DLTS). 3C-SiC grown on Si using silane and propane has a deep level with an activation energy of 0.3 eV@. This defect is passivated by hydrogen, and its majority is reactivated by annealing at a temperature above 500°C. The plasma treatment forms new deep levels in the near-surface region of the sample. Although these levels are almost annealed out at 400°C, different kinds of deep levels appear after annealing in the near-surface region. The concentration is low ($<10^{14}$ cm-3) for annealing at 400°C, and rapidly increases with increasing annealing temperature up to 600°C. Thus, the concentration of the deep levels in 3C-SiC is decreased by the hydrogen plasma treatment and subsequent annealing at 400°C without the introduction of high densities of plasma-induced deep levels.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-04-30
著者
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Tokuda Yutaka
Depertment Of Electronics Aichi Institute Of Technology
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YAMADA Noboru
Power Device Laboratory, Electronic Device Division, Toyota Central Research and Development Laborat
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Sobue Fumitaka
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Okumura Tsugunori
Department Of Electrical And Electronic Engineering Graduate School Of Science And Engineering Tokyo
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Arai Eisuke
Department Of Electrical Ad Computer Engineering Nagoya Institute Of Technology
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Ichimura Masaya
Department Of Electrical & Computer Engineering Nagoya Institute Of Technology
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Kato Masashi
Department Of Applied Biological Chemistry Faculty Of Agriculture Meijo University
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Arai Eisuke
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
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Kato Masashi
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
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Okumura Tsugunori
Department of Electrical Engineering, Tokyo Metropolitan University, Minami-ohsawa, Hachiohji, Tokyo 192-0397, Japan
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Ichimura Masaya
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
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Tokuda Yutaka
Depertment of Electronics, Aichi Institute of Technology, Yakusa, Toyota 470-0392, Japan
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