Characterization of Si wafer Surfaces after Wet Chemical Treatment by the Microwave Reflectance Photconductivity Decay Method with Surface Electric Field
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概要
- 論文の詳細を見る
Voltage is applied between an external electrode and a Si wafer to control surface recombination, and carrier lifetime is measured by the microwave reflectance photconductivity decay ($\mu$-PCD) method. The voltage dependence of the lifetime changes depending on the surface Fermi level and the surface state density. We apply this method to Si wafers with various chemical treatments, and qualitatively characterize the surface properies from the dependence of lifetime on applied voltage. The change in the surface properties with time after the treatment is also investigated.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2001-05-15
著者
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Tada Atsushi
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Hirano Masashi
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Arai Eisuke
Department Of Electrical Ad Computer Engineering Nagoya Institute Of Technology
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Sumie Shingo
Process Technology Research Laboratory Kobe Steel Ltd.
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Takamatsu Hiroyuki
Process Technology Research Laboratory Kobe Steel Ltd.
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Ichimura Masaya
Department Of Electrical & Computer Engineering Nagoya Institute Of Technology
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Takamatsu Hiroyuki
Process Technology Research Laboratory, Kobe Steel, Ltd, Nishi-ku, Kobe 651-2271, Japan
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Arai Eisuke
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso, Showa-ku, Nagoya 466-8555, Japan
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Tada Atsushi
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso, Showa-ku, Nagoya 466-8555, Japan
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