Room-Temperature Hydrogen Sensing Properties of SnO2 Thin Films Fabricated by the Photochemical Deposition and Doping Methods
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概要
- 論文の詳細を見る
SnO2 thin films were fabricated by photochemical deposition (PCD) method for application as a hydrogen gas sensor. The aqueous growth solution contained 10 mmol/L SnSO4, and the pH was adjusted to 2 by addition of HNO3. The growth solution was dropped onto the glass substrate and irradiated using an ultrahigh-pressure mercury arc lamp. To enhance the sensitivity to hydrogen, Pd was doped by a novel photochemical doping method, in which PdCl2 solution was dropped onto the film and irradiated. The photo-Pd-doped films showed an increase in current of about five orders of magnitude at room temperature in 0.5% hydrogen ambient compared with in vacuum. Thus, photo-Pd-doped PCD-SnO2 films operate as a highly sensitive room-temperature hydrogen gas sensor.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-09-15
著者
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Ichimura Masaya
Department Of Electrical & Computer Engineering Nagoya Institute Of Technology
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Ito Daisuke
Department Of Advanced Bioscience Faculty Of Agriculture Kinki University
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Ito Daisuke
Department of Engineering Physics, Electronics and Mechanics, Nagoya Institute of Technology, Nagoya 466-8555, Japan
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