Electrochemical Deposition of GaSxOy Thin Films
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概要
- 論文の詳細を見る
GaSxOy thin films were deposited on indium–tin-oxide- and fluorine-doped-tin-oxide-coated glass substrates by electrochemical deposition from an aqueous solution of Ga2(SO4)3 and Na2S2O3. GaSxOy is a wide band gap semiconductor and suitable as a buffer layer in solar cells. The as-deposited films were characterized by Auger electron spectroscopy, scanning electron microscopy and optical transmission spectroscopy. We observed the photosensitivity of the films by means of photoelectrochemical measurements. We confirmed that GaSxOy films show n-type conduction. The film deposited under the optimum conditions exhibited high transmission and a wide energy band gap of 3.5 eV.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-06-25
著者
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Ichimura Masaya
Department Of Electrical & Computer Engineering Nagoya Institute Of Technology
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Chowdhury Supria
Department of Engineering Physics, Electronics and Mechanics, Nagoya Institute of Technology, Gokiso, Showa, Nagoya 466-8555, Japan
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