Observation of Defects that Reduce Schottky Barrier Height in 4H-SiC Schottky Contacts Using Electrochemical Deposition of ZnO

スポンサーリンク

概要

• 論文の詳細を見る

• We performed the electrochemical deposition of ZnO on 4H-SiC epilayers and characterized Schottky diodes fabricated on the same epilayers in order to find the positions of defects that cause the low Schottky barrier height. We found that the positions where ZnO was deposited corresponded to the positions of contacts with lower Schottky barrier heights than the other contacts. After the removal of the ZnO layer, the surfaces of the ZnO-deposited positions were observed by atomic force microscopy. Photoluminescence mapping was also performed to observe the distribution of stacking faults. Then, the epilayer was etched using molten salt and the resulting etch pits were observed. Finally, we discussed the types of defects that reduce the Schottky barrier height.

• 2011-03-25

著者

• Kimoto Tsunenobu

  Department Of Electrical Engineering Faculty Of Engineering Kyoto University

• Ichimura Masaya

  Department Of Electrical & Computer Engineering Nagoya Institute Of Technology

• Ono Hidenori

  Department Of Engineering Physics Electronics And Mechanics Nagoya Institute Of Technology

• Kato Masashi

  Department Of Applied Biological Chemistry Faculty Of Agriculture Meijo University

• Ono Hidenori

  Department of Engineering Physics, Electronics and Mechanics, Nagoya Institute of Technology, Nagoya 466-8555, Japan

• Feng Gan

  Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan

関連論文

• Elimination of the Major Deep Levels in n- and p-Type 4H-SiC by Two-Step Thermal Treatment
• Recent Progress in SiC Ion Implantation and MOS Technologies for High Power Devices
• High Channel Mobility in Inversion Layer of SiC MOSFETs for Power Switching Transistors
• High Channel Mobility in Inversion Layer of SiC MOSFETs for Power Switching Transistors
• Slow Decay of Excess Carrier Concentration in Bonded Silicon-on-Insulator Wafers
• Scanning Capacitance and Spreading Resistance Microscopy of SiC Multiple-pn-Junction Structure : Semiconductors
• Annealing Study of the Electrochemically Deposited InS_xO_y Thin Film and Its Photovoltaic Application
• A Defect Model for Photoirradiated Semiconductors : Suppression of the Self-Compensation in II-VI Materials
• Correspondence between Surface Morphological Faults and Crystallographic Defects in 4H-SiC Homoepitaxial Film
• Defect Formation in (0001)- and (1120)-Oriented 4H-SiC Crystals P^+-Implanted at Room Temperature
• Homoepitaxial Chemical Vapor Deposition of 6H-SiC at Low Temperatures on {011^^-4} Substrates
• Photoluminescence of Ti Doped 6H-SiC Grown by Vapor Phase Epitaxy
• Deep Interface States in SiO_2/p-type α-SiC Structure
• Improved Performance of 4H-SiC Double Reduced Surface Field Metal-Oxide-Semiconductor Field-Effect Transistors by Increasing RESURF Doses
• Effect of C/Si Ratio on Spiral Growth on 6H-SiC (0001)
• High-Voltage 4H-SiC Schottky Barrier Diodes Fabricated on (033^^-8) with Closed Micropipes
• High-Sensitivity Analysis of Z_1 Center Concentration in 4H-SiC Grown by Horizontal Cold-Wall Chemical Vapor Deposition
• Surface Morphological Structures of 4H-, 6H- and 15R-SiC (0001) Epitaxial Layers Grown by Chemical Vapor Deposition
• Fast Epitaxial Growth of 4H-SiC by Chimney-Type Vertical Hot-Wall Chemical Vapor Deposition : Semiconductors
• High-Purity and Thick 4H- and 6H-SiC(0001) Epitaxial Growth by Cold-Wall Chemical Vapor Deposition and High-Voltage pin Diodes : Semiconductors
• Specular Surface Morphology of 4H-SiC Epilayers Grown on (112^^-0) Face
• Reduction of Deep Levels and Improvement of Carrier Lifetime in n-Type 4H-SiC by Thermal Oxidation
• Photoluminescence of 3C-SiC Epilayers Grown on Lattice-Matched Substrates
• Photoluminescence of Homoepitaxial 3C-SiC on Sublimation-Grown 3C-SiC Substrates
• Exciton-Related Photoluminescence in 4H-SiC Growm by Step-Controlled Epitaxy
• Step-Controlled Epitaxial Growth of 4H-SiC and Doping of Ga as a Blue Luminescent Center
• Anomalously Large Difference in Ga Incorporation for AlGaN Grown on the (1120) and (1100) Planes under Group-III-Rich Conditions
• Effects of Channel Mobility on SiC Power Metal-Oxide-Semicomductor Field Effect Transistor Perforrmance
• Deep Level Study in Heteroepitaxial 3C-SiC Grown on Si by Hexamethyldisilane : Electrical Properties of Condensed Matter
• Nitrogen Donor Concentrations and Its Energy Levels in 4H-SiC Uniquely Determined by a New Graphical Method Based on Hall-Effect Measurement
• Nitrogen Ion Implantation into 6H-SiC and Application to High-Temperature, Radiation-Hard Diodes
• Vanadium Ion Implanted Guard Rings for High-Voltage 4H-SiC Schottky Rectifiers
• Passivation of Deep Levels in 3C-SiC on Si by a Hydrogen Plasma Treatment
• Optical Characterization of GaSb-Based Ternary and Quaternary Alloys Grown by Liquid-Phase Epitaxy at Low Temperatures
• Photoluminescence Study of Al_xGa_Sb Grown by Liquid-Phase Epitaxy
• High-quality Epitaxial Growth of SiC and State-of-the-art Device Development
• Recent Progress in Epitaxial Growth of SiC for Power Devices
• Structure Analysis of ZrB_2(0001) Surface Prepared by ex situ HF Treatment
• Effects of C/Si Ratio in Chemical Vapor Deposition of 4H-SiC(1120) and (0338)
• Excess Carrier Lifetime Measurement for Plasma-Etched GaN by the Microwave Photoconductivity Decay Method
• Nonpolar 4H-Polytype AlN/AlGaN Multiple Quantum Well Structure Grown on 4H-SiC(1100)
• Boron Diffusion Profiles in Ultrathin Silicon-on-Insulator Structures and Their Relation to Crystalline Quality
• AlGaSb Single, Double and Multiple Heterostructures Grown by Liquid-Phase Epitaxy and their Photoluminescence Properties : Semiconductors and Semiconductor Devices
• Predicted Extremely High Mobilities of Two-Dimensional Electrons in AlGaSb/GaSb and AlInAsSb/InAs Single Heterostructures
• Sacrificial Anodic Oxidation of 6H-SiC : Semiconductors
• Calculation of Bond Lengths in Si_Ge_x Alloys Based on the Valence-Force-Field Model
• Origin of Etch Hillocks Formed on On-Axis SiC($000\bar{1}$) Surfaces by Molten KOH Etching
• Observation of Defects that Reduce Schottky Barrier Height in 4H-SiC Schottky Contacts Using Electrochemical Deposition of ZnO
• Applicability of Phosphorus and Boron Diffusion Parameters Extracted from Predeposition to Drive-in Diffusion for Bulk Silicon and Silicon-on-Insulator
• Calculation of Bond Lengths in InGaAsP Quaternary Alloy Semiconductor
• Average Bond Lengths and Atom Arrangement in In_Ga_xAs and GaAs_P_x III-V Ternary Alloy Semiconductors
• Alloy Scattering Mobility in III-V Ternary Alloy Semiconductors with Nonrandom Atom Arrangerment
• Reduction of Threading Dislocation Density in 2H-AlN Grown on 6H-SiC(0001) by Minimizing Unintentional Active-Nitrogen Exposure before Growth
• Correlation between Oxygen Composition and Electrical Properties in NiO Thin Films for Resistive Random Access Memory
• Reliability of Nitrided Gate Oxides for N- and P-Type 4H-SiC(0001) Metal--Oxide--Semiconductor Devices
• Electrochemical Deposition of ZnO1-xSx Thin Films Using Three-Step Pulse
• Observation of Regions with Low Schottky Barrier Height in 4H-SiC by the Electrochemical Deposition(Session9B: GaN and SiC Device Process Technology)
• Observation of Regions with Low Schottky Barrier Height in 4H-SiC by the Electrochemical Deposition(Session9B: GaN and SiC Device Process Technology)
• Wide Bandgap InS-based Thin Film: Deposition, Characterization, and Application for SnS Solar Cells
• Electrodeposited ZnO/SnS Heterostructures for Solar Cell Application
• Enhancement of Carrier Lifetimes in n-Type 4H-SiC Epitaxial Layers by Improved Surface Passivation
• Nondestructive Visualization of Individual Dislocations in 4H-SiC Epilayers by Micro Photoluminescence Mapping
• Influence of Effective Fixed Charges on Short-Channel Effects in SiC Metal–Oxide–Semiconductor Field-Effect Transistors
• Electrostatic-Actuated Suspended Ribbon Structure Fabricated in Single-Crystalline SiC by Selective Photoelectrochemical Etching
• In situ Gravimetric Monitoring of Thermal Decomposition and Hydrogen Etching Rates of 6H-SiC(0001) Si Face
• Nearly Ideal Current--Voltage Characteristics of Schottky Barrier Diodes Formed on Hydride-Vapor-Phase-Epitaxy-Grown GaN Free-Standing Substrates
• Robust 4H–SiC pn Diodes Fabricated using ($11\bar{2}0$) Face
• Surface Morphologies of 4H-SiC($11\bar{2}0$) and ($1\bar{1}00$) Treated by High-Temperature Gas Etching
• Improvement of Channel Mobility in Inversion-Type n-Channel GaN Metal–Oxide–Semiconductor Field-Effect Transistor by High-Temperature Annealing
• Low-Concentration Deep Traps in 4H-SiC Grown with High Growth Rate by Chemical Vapor Deposition
• Current Transport Characteristics of Quasi-AlxGa1-xN/SiC Heterojunction Bipolar Transistors with Various Band Discontinuities (Special Issue : Solid State Devices and Materials (2))
• Diffusion of Transition Metals in 4H-SiC and Trials of Impurity Gettering
• AlN/GaN Short-Period Superlattice Coherently Grown on 6H-SiC(0001) Substrates by Molecular Beam Epitaxy
• Carrier Recombination in n-Type 4H-SiC Epilayers with Long Carrier Lifetimes
• 4H-SiC pn Photodiodes with Temperature-Independent Photoresponse up to 300 °C
• Long Photoconductivity Decay Characteristics in p-Type 4H-SiC Bulk Crystals
• 21.7kV 4H-SiC PiN Diode with a Space-Modulated Junction Termination Extension
• Surface Morphological Structures of 4H-, 6H- and 15R-SiC (0001) Epitaxial Layers Grown by Chemical Vapor Deposition
• 4H-SiC pn Photodiodes with Temperature-Independent Photoresponse up to 300℃
• Over-700-nm Critical Thickness of AlN Grown on 6H-SiC(0001) by Molecular Beam Epitaxy
• Carrier Recombination in n-Type 4H-SiC Epilayers with Long Carrier Lifetimes
• Interface Properties of Metal–Oxide–Semiconductor Structures on 4H-SiC{0001} and ($11\bar{2}0$) Formed by N2O Oxidation
• Effect of C/Si Ratio on Spiral Growth on 6H-SiC (0001)
• Abnormal Out-Diffusion of Epitaxially Doped Boron in 4H–SiC Caused by Implantation and Annealing
• Homoepitaxy of 4H-SiC on Trenched (0001) Si Face Substrates by Chemical Vapor Deposition
• Selective Embedded Growth of 4H–SiC Trenches in 4H–SiC(0001) Substrates Using Carbon Mask
• Systematic Investigation of $c$-Axis Tilt in GaN and AlGaN Grown on Vicinal SiC(0001) Substrates
• Microscopic Investigation of the Electrical and Structural Properties of Conductive Filaments Formed in Pt/NiO/Pt Resistive Switching Cells
• High-Temperature Deep Level Transient Spectroscopy on As-Grown P-Type 4H–SiC Epilayers
• Optical Properties of Highly Strained AlN Coherently Grown on 6H-SiC(0001)
• Coherent Growth of AlN/GaN Short-Period Superlattice with Average GaN Mole Fraction of up to 20% on 6H-SiC(0001) Substrates by Plasma-Assisted Molecular-Beam Epitaxy
• Determination of Phase Diagram of Electron--Hole Systems in 4H-SiC
• Growth, Electrical Characterization, and Electroluminescence of GaN/SiC Heterojunction Diodes and Bipolar Transistors Fabricated on SiC Off-Axis Substrates
• Improvement of Carrier Lifetimes in Highly Al-Doped p-Type 4H-SiC Epitaxial Layers by Hydrogen Passivation
• Source of surface morphological defects formed on 4H-SiC homoepitaxial films
• Ultrahigh-Voltage SiC PiN Diodes with an Improved Junction Termination Extension Structure and Enhanced Carrier Lifetime
• Structure Analysis of ZrB2(0001) Surface Prepared by ex situ HF Treatment
• Reduction of Double Positioning Twinning in 3C-SiC Grown on α-SiC Substrates
• High-Sensitivity Analysis of $\mathrm{Z}_{1}$ Center Concentration in 4H-SiC Grown by Horizontal Cold-Wall Chemical Vapor Deposition
• Optical Properties of Highly Strained AlN Coherently Grown on 6H-SiC (0001)

もっと見る 閉じる

スポンサーリンク