High-Sensitivity Analysis of $\mathrm{Z}_{1}$ Center Concentration in 4H-SiC Grown by Horizontal Cold-Wall Chemical Vapor Deposition

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概要

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• $\mathrm{Z}_{1}$ center concentrations in 4H-SiC epilayers prepared by horizontal cold-wall chemical vapor deposition under various growth conditions were measured using deep-level transient Fourier spectroscopy with high sensitivity. It was found that the $\mathrm{Z}_{1}$ center concentration decreases with increasing carbon-to-silicon ratio in epitaxial growth. It is suggested that the $\mathrm{Z}_{1}$ center concentration is not related to the nitrogen donor concentration.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 2002-05-15

著者

• NAKAMURA Shun-ichi

  Department of Biochemistry, Kobe University School of Medicine

• Kimoto Tsunenobu

  Department Of Electrical Engineering Faculty Of Engineering Kyoto University

• Matsunami Hiroyuki

  Department Of Eectrical Engineering Kyoto University

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