Carrier Recombination in n-Type 4H-SiC Epilayers with Long Carrier Lifetimes
スポンサーリンク
概要
- 論文の詳細を見る
A longest carrier lifetime of 33.2 μs was achieved by eliminating the Z_{1/2} center via thermal oxidation at 1400 °C for 48 h and subsequent surface passivation with a nitrided oxide on a 220-μm-thick n-type 4H-SiC epilayer. By deep-level elimination, photoluminescence (PL) in the infrared region (wavelength: 700--950 nm) was remarkably enhanced at locations of threading dislocations. A threading screw dislocation exhibited much stronger infrared PL than a threading edge dislocation. The present results indicate that carrier recombination at extended defects becomes pronounced through the elimination of the Z_{1/2} center in the epilayers.
- 2012-10-25
著者
-
Suda Jun
Department Of Electrical Engineering Kushiro National College Of Technology
-
Kimoto Tsunenobu
Department Of Electrical Engineering Faculty Of Engineering Kyoto University
-
ICHIKAWA Shuhei
Department of Electronic Science and Engineering, Kyoto University
-
KAWAHARA Koutarou
Department of Electronic Science and Engineering, Kyoto University
-
Kawahara Koutarou
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
-
Ichikawa Shuhei
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
関連論文
- A New Class of Step-and-Terrace Structure Observed on 4H-SiC(0001) after High-Temperature Gas Etching
- Elimination of the Major Deep Levels in n- and p-Type 4H-SiC by Two-Step Thermal Treatment
- Recent Progress in SiC Ion Implantation and MOS Technologies for High Power Devices
- High Channel Mobility in Inversion Layer of SiC MOSFETs for Power Switching Transistors
- High Channel Mobility in Inversion Layer of SiC MOSFETs for Power Switching Transistors
- Scanning Capacitance and Spreading Resistance Microscopy of SiC Multiple-pn-Junction Structure : Semiconductors
- Correspondence between Surface Morphological Faults and Crystallographic Defects in 4H-SiC Homoepitaxial Film
- Defect Formation in (0001)- and (1120)-Oriented 4H-SiC Crystals P^+-Implanted at Room Temperature
- Homoepitaxial Chemical Vapor Deposition of 6H-SiC at Low Temperatures on {011^^-4} Substrates
- Photoluminescence of Ti Doped 6H-SiC Grown by Vapor Phase Epitaxy
- Deep Interface States in SiO_2/p-type α-SiC Structure
- Improved Performance of 4H-SiC Double Reduced Surface Field Metal-Oxide-Semiconductor Field-Effect Transistors by Increasing RESURF Doses
- Effect of C/Si Ratio on Spiral Growth on 6H-SiC (0001)
- High-Voltage 4H-SiC Schottky Barrier Diodes Fabricated on (033^^-8) with Closed Micropipes
- High-Sensitivity Analysis of Z_1 Center Concentration in 4H-SiC Grown by Horizontal Cold-Wall Chemical Vapor Deposition
- Surface Morphological Structures of 4H-, 6H- and 15R-SiC (0001) Epitaxial Layers Grown by Chemical Vapor Deposition
- Fast Epitaxial Growth of 4H-SiC by Chimney-Type Vertical Hot-Wall Chemical Vapor Deposition : Semiconductors
- High-Purity and Thick 4H- and 6H-SiC(0001) Epitaxial Growth by Cold-Wall Chemical Vapor Deposition and High-Voltage pin Diodes : Semiconductors
- Specular Surface Morphology of 4H-SiC Epilayers Grown on (112^^-0) Face
- Reduction of Deep Levels and Improvement of Carrier Lifetime in n-Type 4H-SiC by Thermal Oxidation
- Photoluminescence of 3C-SiC Epilayers Grown on Lattice-Matched Substrates
- Photoluminescence of Homoepitaxial 3C-SiC on Sublimation-Grown 3C-SiC Substrates
- Exciton-Related Photoluminescence in 4H-SiC Growm by Step-Controlled Epitaxy
- Step-Controlled Epitaxial Growth of 4H-SiC and Doping of Ga as a Blue Luminescent Center
- Anomalously Large Difference in Ga Incorporation for AlGaN Grown on the (1120) and (1100) Planes under Group-III-Rich Conditions
- Effects of Channel Mobility on SiC Power Metal-Oxide-Semicomductor Field Effect Transistor Perforrmance
- ZrB_2 Substrate for Nitride Semiconductors
- Zirconium Diboride (0001) as an Electrically Conductive Lattice-Matched Substrate for Gallium Nitride
- (2×6) Surface Reconstruction of GaAs (001) Obtained by Hydrogen Sulfide Irradiation
- Optical Properties of ZnSe/ZnMgSSe Single Quantum Wells Grown by Metalorganic Molecular Beam Epitaxy
- Gas-Source Molecular Beam Epitaxial Growth of (Zn, Mg)(S, Se) Using Bis-methylcyclopentadienyl-magnesium and Hydrogen Sulfide
- Nitrogen Donor Concentrations and Its Energy Levels in 4H-SiC Uniquely Determined by a New Graphical Method Based on Hall-Effect Measurement
- Nitrogen Ion Implantation into 6H-SiC and Application to High-Temperature, Radiation-Hard Diodes
- Vanadium Ion Implanted Guard Rings for High-Voltage 4H-SiC Schottky Rectifiers
- Temperature Dependence of the Raman Shift of the A_ mode for NdGaO_3 Crystal
- The First-Order Raman Spectra and Lattice Dynamics for YAlO_3 Crystal
- The First-Order Raman Spectra and Lattice Dynamics for YAlO_3 Crystal
- High-quality Epitaxial Growth of SiC and State-of-the-art Device Development
- Recent Progress in Epitaxial Growth of SiC for Power Devices
- Structure Analysis of ZrB_2(0001) Surface Prepared by ex situ HF Treatment
- Effects of C/Si Ratio in Chemical Vapor Deposition of 4H-SiC(1120) and (0338)
- Nonpolar 4H-Polytype AlN/AlGaN Multiple Quantum Well Structure Grown on 4H-SiC(1100)
- Growth of AlN (112^^-0) on 6H-SiC (112^^-0) by Molecular-Beam Epitaxy : Semiconductors
- Temperature Dependence of the Linewidth of the First-Order Raman Spectra for CaWO_4 Crystal
- Origin of Etch Hillocks Formed on On-Axis SiC($000\bar{1}$) Surfaces by Molten KOH Etching
- Observation of Defects that Reduce Schottky Barrier Height in 4H-SiC Schottky Contacts Using Electrochemical Deposition of ZnO
- Temperature Dependence of the Ag+Bg-Mode of Raman Shift for CaWO_4 Crystal
- Reduction of Threading Dislocation Density in 2H-AlN Grown on 6H-SiC(0001) by Minimizing Unintentional Active-Nitrogen Exposure before Growth
- Correlation between Oxygen Composition and Electrical Properties in NiO Thin Films for Resistive Random Access Memory
- Reliability of Nitrided Gate Oxides for N- and P-Type 4H-SiC(0001) Metal--Oxide--Semiconductor Devices
- Enhancement of Carrier Lifetimes in n-Type 4H-SiC Epitaxial Layers by Improved Surface Passivation
- Nondestructive Visualization of Individual Dislocations in 4H-SiC Epilayers by Micro Photoluminescence Mapping
- Influence of Effective Fixed Charges on Short-Channel Effects in SiC Metal–Oxide–Semiconductor Field-Effect Transistors
- Electrostatic-Actuated Suspended Ribbon Structure Fabricated in Single-Crystalline SiC by Selective Photoelectrochemical Etching
- In situ Gravimetric Monitoring of Thermal Decomposition and Hydrogen Etching Rates of 6H-SiC(0001) Si Face
- Nearly Ideal Current--Voltage Characteristics of Schottky Barrier Diodes Formed on Hydride-Vapor-Phase-Epitaxy-Grown GaN Free-Standing Substrates
- Temperature Dependence of the Linewidth of the First-Order Raman Spectra for Aragonite Crystal
- The First-Order Raman Spectra and Lattice Dynamics for CdWO_4 Crystal
- Lattice Dynamics and Temperature Dependence of the Linewidth of the First-Order Raman Spectra for Sintered Hexagonal GeO_2 Crystalline
- GaP/Si Heterojunction with Ohmic Conduction Fabricated by Wafer Fusion Technique
- Robust 4H–SiC pn Diodes Fabricated using ($11\bar{2}0$) Face
- Surface Morphologies of 4H-SiC($11\bar{2}0$) and ($1\bar{1}00$) Treated by High-Temperature Gas Etching
- Improvement of Channel Mobility in Inversion-Type n-Channel GaN Metal–Oxide–Semiconductor Field-Effect Transistor by High-Temperature Annealing
- Low-Concentration Deep Traps in 4H-SiC Grown with High Growth Rate by Chemical Vapor Deposition
- Selective Area Growth of Cubic GaN on 3C-SiC (001) by Metalorganic Molecular Beam Epitaxy
- Current Transport Characteristics of Quasi-AlxGa1-xN/SiC Heterojunction Bipolar Transistors with Various Band Discontinuities (Special Issue : Solid State Devices and Materials (2))
- Lattice Dynamics and Temperature Dependence of the First-Order Raman Spectra for PbMoO_4 Crystal : Condensed Matter: Structure, etc.
- Diffusion of Transition Metals in 4H-SiC and Trials of Impurity Gettering
- AlN/GaN Short-Period Superlattice Coherently Grown on 6H-SiC(0001) Substrates by Molecular Beam Epitaxy
- Carrier Recombination in n-Type 4H-SiC Epilayers with Long Carrier Lifetimes
- 4H-SiC pn Photodiodes with Temperature-Independent Photoresponse up to 300 °C
- Long Photoconductivity Decay Characteristics in p-Type 4H-SiC Bulk Crystals
- 21.7kV 4H-SiC PiN Diode with a Space-Modulated Junction Termination Extension
- Surface Morphological Structures of 4H-, 6H- and 15R-SiC (0001) Epitaxial Layers Grown by Chemical Vapor Deposition
- 4H-SiC pn Photodiodes with Temperature-Independent Photoresponse up to 300℃
- Over-700-nm Critical Thickness of AlN Grown on 6H-SiC(0001) by Molecular Beam Epitaxy
- Carrier Recombination in n-Type 4H-SiC Epilayers with Long Carrier Lifetimes
- Interface Properties of Metal–Oxide–Semiconductor Structures on 4H-SiC{0001} and ($11\bar{2}0$) Formed by N2O Oxidation
- Effect of C/Si Ratio on Spiral Growth on 6H-SiC (0001)
- Abnormal Out-Diffusion of Epitaxially Doped Boron in 4H–SiC Caused by Implantation and Annealing
- Homoepitaxy of 4H-SiC on Trenched (0001) Si Face Substrates by Chemical Vapor Deposition
- High-Quality AlN by Initial Layer-by-Layer Growth on Surface-Controlled 4H–SiC(0001) Substrate
- Selective Embedded Growth of 4H–SiC Trenches in 4H–SiC(0001) Substrates Using Carbon Mask
- Systematic Investigation of $c$-Axis Tilt in GaN and AlGaN Grown on Vicinal SiC(0001) Substrates
- Microscopic Investigation of the Electrical and Structural Properties of Conductive Filaments Formed in Pt/NiO/Pt Resistive Switching Cells
- High-Temperature Deep Level Transient Spectroscopy on As-Grown P-Type 4H–SiC Epilayers
- Optical Properties of Highly Strained AlN Coherently Grown on 6H-SiC(0001)
- Coherent Growth of AlN/GaN Short-Period Superlattice with Average GaN Mole Fraction of up to 20% on 6H-SiC(0001) Substrates by Plasma-Assisted Molecular-Beam Epitaxy
- Determination of Phase Diagram of Electron--Hole Systems in 4H-SiC
- Growth, Electrical Characterization, and Electroluminescence of GaN/SiC Heterojunction Diodes and Bipolar Transistors Fabricated on SiC Off-Axis Substrates
- Improvement of Carrier Lifetimes in Highly Al-Doped p-Type 4H-SiC Epitaxial Layers by Hydrogen Passivation
- Source of surface morphological defects formed on 4H-SiC homoepitaxial films
- Ultrahigh-Voltage SiC PiN Diodes with an Improved Junction Termination Extension Structure and Enhanced Carrier Lifetime
- Structure Analysis of ZrB2(0001) Surface Prepared by ex situ HF Treatment
- Reduction of Double Positioning Twinning in 3C-SiC Grown on α-SiC Substrates
- High-Sensitivity Analysis of $\mathrm{Z}_{1}$ Center Concentration in 4H-SiC Grown by Horizontal Cold-Wall Chemical Vapor Deposition
- Optical Properties of Highly Strained AlN Coherently Grown on 6H-SiC (0001)