Carrier Recombination in n-Type 4H-SiC Epilayers with Long Carrier Lifetimes
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概要
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A longest carrier lifetime of 33.2 μs was achieved by eliminating the Z_{1/2} center via thermal oxidation at 1400 °C for 48 h and subsequent surface passivation with a nitrided oxide on a 220-μm-thick n-type 4H-SiC epilayer. By deep-level elimination, photoluminescence (PL) in the infrared region (wavelength: 700--950 nm) was remarkably enhanced at locations of threading dislocations. A threading screw dislocation exhibited much stronger infrared PL than a threading edge dislocation. The present results indicate that carrier recombination at extended defects becomes pronounced through the elimination of the Z_{1/2} center in the epilayers.
- 2012-10-25
著者
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Suda Jun
Department Of Electrical Engineering Kushiro National College Of Technology
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Kimoto Tsunenobu
Department Of Electrical Engineering Faculty Of Engineering Kyoto University
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ICHIKAWA Shuhei
Department of Electronic Science and Engineering, Kyoto University
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KAWAHARA Koutarou
Department of Electronic Science and Engineering, Kyoto University
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Kawahara Koutarou
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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Ichikawa Shuhei
Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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