Long Photoconductivity Decay Characteristics in p-Type 4H-SiC Bulk Crystals
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概要
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We investigated the photoconductivity decay characteristics of p-type 4H-SiC bulk crystals by differential microwave photoconductance decay (μ-PCD) measurements using a 349-nm laser as an excitation source. The decay time at room temperature was 2600 μs, which is much longer than that of n-type 4H-SiC bulk crystals (40 ns). Decay time decreased with increasing temperature, resulting in 120 μs at 250 °C, and the activation energy of decay time was determined to be 140\pm 10 meV. Long decay characteristics were also observed by below-band-gap excitation at 523 nm.
- 2013-01-25
著者
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Suda Jun
Department Of Electrical Engineering Kushiro National College Of Technology
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Kimoto Tsunenobu
Department Of Electrical Engineering Faculty Of Engineering Kyoto University
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Okuda Takafumi
Department of Electronics Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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Miyake Hiroki
Department of Electronics Science and Engineering, Kyoto University, Kyoto 615-8510, Japan
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MIYAKE Hiroki
Department of Applied Pharmacology, Kyoto College of Pharmacy
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