Diffusion of Transition Metals in 4H-SiC and Trials of Impurity Gettering

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概要

• 論文の詳細を見る
• 2012-03-25

著者

• Kimoto Tsunenobu

  Department Of Electronic Science And Engineering Kyoto University

• Kimoto Tsunenobu

  Department Of Electrical Engineering Faculty Of Engineering Kyoto University

• Bessho Takeshi

  Higashifuji Technical Center Toyota Motor Corporation

• DANNO Katsunori

  Higashifuji Technical Center, Toyota Motor Corporation

• SAITOH Hiroaki

  Higashifuji Technical Center, Toyota Motor Corporation

• SEKI Akinori

  Higashifuji Technical Center, Toyota Motor Corporation

• SHIRAI Takayuki

  Higashifuji Technical Center, Toyota Motor Corporation

• SUZUKI Hiroshi

  Higashifuji Technical Center, Toyota Motor Corporation

• KAWAI Yoichiro

  Higashifuji Technical Center, Toyota Motor Corporation

• Saitoh Hiroaki

  Higashifuji Technical Center Toyota Motor Corporation

• Kawai Yoichiro

  Higashifuji Technical Center Toyota Motor Corporation

• Danno Katsunori

  Higashifuji Technical Center Toyota Motor Corporation

• Shirai Takayuki

  Higashifuji Technical Center Toyota Motor Corporation

• Seki Akinori

  Higashifuji Technical Center Toyota Motor Corporation

関連論文

• Elimination of the Major Deep Levels in n- and p-Type 4H-SiC by Two-Step Thermal Treatment
• Recent Progress in SiC Ion Implantation and MOS Technologies for High Power Devices
• High Channel Mobility in Inversion Layer of SiC MOSFETs for Power Switching Transistors
• High Channel Mobility in Inversion Layer of SiC MOSFETs for Power Switching Transistors
• Scanning Capacitance and Spreading Resistance Microscopy of SiC Multiple-pn-Junction Structure : Semiconductors
• Correspondence between Surface Morphological Faults and Crystallographic Defects in 4H-SiC Homoepitaxial Film
• Defect Formation in (0001)- and (1120)-Oriented 4H-SiC Crystals P^+-Implanted at Room Temperature
• Homoepitaxial Chemical Vapor Deposition of 6H-SiC at Low Temperatures on {011^^-4} Substrates
• Photoluminescence of Ti Doped 6H-SiC Grown by Vapor Phase Epitaxy
• Deep Interface States in SiO_2/p-type α-SiC Structure
• Improved Performance of 4H-SiC Double Reduced Surface Field Metal-Oxide-Semiconductor Field-Effect Transistors by Increasing RESURF Doses
• Effect of C/Si Ratio on Spiral Growth on 6H-SiC (0001)
• High-Voltage 4H-SiC Schottky Barrier Diodes Fabricated on (033^^-8) with Closed Micropipes
• High-Sensitivity Analysis of Z_1 Center Concentration in 4H-SiC Grown by Horizontal Cold-Wall Chemical Vapor Deposition
• Surface Morphological Structures of 4H-, 6H- and 15R-SiC (0001) Epitaxial Layers Grown by Chemical Vapor Deposition
• Fast Epitaxial Growth of 4H-SiC by Chimney-Type Vertical Hot-Wall Chemical Vapor Deposition : Semiconductors
• High-Purity and Thick 4H- and 6H-SiC(0001) Epitaxial Growth by Cold-Wall Chemical Vapor Deposition and High-Voltage pin Diodes : Semiconductors
• Specular Surface Morphology of 4H-SiC Epilayers Grown on (112^^-0) Face
• Reduction of Deep Levels and Improvement of Carrier Lifetime in n-Type 4H-SiC by Thermal Oxidation
• Photoluminescence of 3C-SiC Epilayers Grown on Lattice-Matched Substrates
• Photoluminescence of Homoepitaxial 3C-SiC on Sublimation-Grown 3C-SiC Substrates
• Exciton-Related Photoluminescence in 4H-SiC Growm by Step-Controlled Epitaxy
• Step-Controlled Epitaxial Growth of 4H-SiC and Doping of Ga as a Blue Luminescent Center
• Anomalously Large Difference in Ga Incorporation for AlGaN Grown on the (1120) and (1100) Planes under Group-III-Rich Conditions
• Effects of Channel Mobility on SiC Power Metal-Oxide-Semicomductor Field Effect Transistor Perforrmance
• Nitrogen Donor Concentrations and Its Energy Levels in 4H-SiC Uniquely Determined by a New Graphical Method Based on Hall-Effect Measurement
• Nitrogen Ion Implantation into 6H-SiC and Application to High-Temperature, Radiation-Hard Diodes
• Vanadium Ion Implanted Guard Rings for High-Voltage 4H-SiC Schottky Rectifiers
• High-quality Epitaxial Growth of SiC and State-of-the-art Device Development
• Recent Progress in Epitaxial Growth of SiC for Power Devices
• Structure Analysis of ZrB_2(0001) Surface Prepared by ex situ HF Treatment
• Effects of C/Si Ratio in Chemical Vapor Deposition of 4H-SiC(1120) and (0338)
• Nonpolar 4H-Polytype AlN/AlGaN Multiple Quantum Well Structure Grown on 4H-SiC(1100)
• Origin of Etch Hillocks Formed on On-Axis SiC($000\bar{1}$) Surfaces by Molten KOH Etching
• Observation of Defects that Reduce Schottky Barrier Height in 4H-SiC Schottky Contacts Using Electrochemical Deposition of ZnO
• Reduction of Threading Dislocation Density in 2H-AlN Grown on 6H-SiC(0001) by Minimizing Unintentional Active-Nitrogen Exposure before Growth
• Correlation between Oxygen Composition and Electrical Properties in NiO Thin Films for Resistive Random Access Memory
• Reliability of Nitrided Gate Oxides for N- and P-Type 4H-SiC(0001) Metal--Oxide--Semiconductor Devices
• Enhancement of Carrier Lifetimes in n-Type 4H-SiC Epitaxial Layers by Improved Surface Passivation
• Nondestructive Visualization of Individual Dislocations in 4H-SiC Epilayers by Micro Photoluminescence Mapping
• Influence of Effective Fixed Charges on Short-Channel Effects in SiC Metal–Oxide–Semiconductor Field-Effect Transistors
• Electrostatic-Actuated Suspended Ribbon Structure Fabricated in Single-Crystalline SiC by Selective Photoelectrochemical Etching
• In situ Gravimetric Monitoring of Thermal Decomposition and Hydrogen Etching Rates of 6H-SiC(0001) Si Face
• Nearly Ideal Current--Voltage Characteristics of Schottky Barrier Diodes Formed on Hydride-Vapor-Phase-Epitaxy-Grown GaN Free-Standing Substrates
• Robust 4H–SiC pn Diodes Fabricated using ($11\bar{2}0$) Face
• Surface Morphologies of 4H-SiC($11\bar{2}0$) and ($1\bar{1}00$) Treated by High-Temperature Gas Etching
• Improvement of Channel Mobility in Inversion-Type n-Channel GaN Metal–Oxide–Semiconductor Field-Effect Transistor by High-Temperature Annealing
• Low-Concentration Deep Traps in 4H-SiC Grown with High Growth Rate by Chemical Vapor Deposition
• Growth of Nitrogen-Polar 2H-AlN on Step-Height-Controlled 6H-SiC(0001) Substrate by Molecular-Beam Epitaxy (Special Issue : Solid State Devices and Materials (1))
• Current Transport Characteristics of Quasi-AlxGa1-xN/SiC Heterojunction Bipolar Transistors with Various Band Discontinuities (Special Issue : Solid State Devices and Materials (2))
• Over-700-nm Critical Thickness of AlN Grown on 6H-SiC(0001) by Molecular Beam Epitaxy
• Diffusion of Transition Metals in 4H-SiC and Trials of Impurity Gettering
• AlN/GaN Short-Period Superlattice Coherently Grown on 6H-SiC(0001) Substrates by Molecular Beam Epitaxy
• Carrier Recombination in n-Type 4H-SiC Epilayers with Long Carrier Lifetimes
• 4H-SiC pn Photodiodes with Temperature-Independent Photoresponse up to 300 °C
• Long Photoconductivity Decay Characteristics in p-Type 4H-SiC Bulk Crystals
• 21.7kV 4H-SiC PiN Diode with a Space-Modulated Junction Termination Extension
• Microscopic Structure of Stepwise Threading Dislocation in 4H-SiC Substrate
• Dislocation Revelation from (0001) Carbon-face of 4H-SiC by Using Vaporized KOH at High Temperature
• Surface Morphological Structures of 4H-, 6H- and 15R-SiC (0001) Epitaxial Layers Grown by Chemical Vapor Deposition
• 4H-SiC pn Photodiodes with Temperature-Independent Photoresponse up to 300℃
• Over-700-nm Critical Thickness of AlN Grown on 6H-SiC(0001) by Molecular Beam Epitaxy
• Carrier Recombination in n-Type 4H-SiC Epilayers with Long Carrier Lifetimes
• Interface Properties of Metal–Oxide–Semiconductor Structures on 4H-SiC{0001} and ($11\bar{2}0$) Formed by N2O Oxidation
• Effect of C/Si Ratio on Spiral Growth on 6H-SiC (0001)
• Abnormal Out-Diffusion of Epitaxially Doped Boron in 4H–SiC Caused by Implantation and Annealing
• Homoepitaxy of 4H-SiC on Trenched (0001) Si Face Substrates by Chemical Vapor Deposition
• Selective Embedded Growth of 4H–SiC Trenches in 4H–SiC(0001) Substrates Using Carbon Mask
• Systematic Investigation of $c$-Axis Tilt in GaN and AlGaN Grown on Vicinal SiC(0001) Substrates
• Microscopic Investigation of the Electrical and Structural Properties of Conductive Filaments Formed in Pt/NiO/Pt Resistive Switching Cells
• High-Temperature Deep Level Transient Spectroscopy on As-Grown P-Type 4H–SiC Epilayers
• Optical Properties of Highly Strained AlN Coherently Grown on 6H-SiC(0001)
• Coherent Growth of AlN/GaN Short-Period Superlattice with Average GaN Mole Fraction of up to 20% on 6H-SiC(0001) Substrates by Plasma-Assisted Molecular-Beam Epitaxy
• Determination of Phase Diagram of Electron--Hole Systems in 4H-SiC
• Growth, Electrical Characterization, and Electroluminescence of GaN/SiC Heterojunction Diodes and Bipolar Transistors Fabricated on SiC Off-Axis Substrates
• Improvement of Carrier Lifetimes in Highly Al-Doped p-Type 4H-SiC Epitaxial Layers by Hydrogen Passivation
• Source of surface morphological defects formed on 4H-SiC homoepitaxial films
• Ultrahigh-Voltage SiC PiN Diodes with an Improved Junction Termination Extension Structure and Enhanced Carrier Lifetime
• Structure Analysis of ZrB2(0001) Surface Prepared by ex situ HF Treatment
• Reduction of Double Positioning Twinning in 3C-SiC Grown on α-SiC Substrates
• High-Sensitivity Analysis of $\mathrm{Z}_{1}$ Center Concentration in 4H-SiC Grown by Horizontal Cold-Wall Chemical Vapor Deposition
• Optical Properties of Highly Strained AlN Coherently Grown on 6H-SiC (0001)

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