Vanadium Ion Implanted Guard Rings for High-Voltage 4H-SiC Schottky Rectifiers

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2000-12-01

著者

• KIMOTO Tsunenobu

  Department of Electronic Science and Engineering, Kyoto University

• MATSUNAMI Hiroyuki

  Department of Electronic Science & Engineering, Kyoto University

• Kimoto Tsunenobu

  Department Of Electrical Engineering Faculty Of Engineering Kyoto University

• HATAYAMA Tomoaki

  Ion Engineering Research Institute Corporation

• YONEDA Tomoaki

  Ion Engineering Research Institute Corporation

• NAKATA Toshitake

  Ion Engineering Research Institute Corporation

• WATANABE Masanori

  Ion Engineering Research Institute Corporation

• Hatayama Tomoaki

  Ion Engineering Research Institute Corporation:(present Address)nara Institute Of Science And Techno

• Nakata Toshitake

  Ion Engineering Research Institute Co.

• Matsunami Hiroyuki

  Department Of Eectrical Engineering Kyoto University

関連論文

• A New Class of Step-and-Terrace Structure Observed on 4H-SiC(0001) after High-Temperature Gas Etching
• Elimination of the Major Deep Levels in n- and p-Type 4H-SiC by Two-Step Thermal Treatment
• Recent Progress in SiC Ion Implantation and MOS Technologies for High Power Devices
• High Channel Mobility in Inversion Layer of SiC MOSFETs for Power Switching Transistors
• High Channel Mobility in Inversion Layer of SiC MOSFETs for Power Switching Transistors
• Cracking of Saturated Hydrocarbon Gas Molecular Beam for Carbonization of Si(001) Surface
• Undoped Silicon Layers Grown by Gas Source Molecular Beam Epitaxy Using Si_2H_6
• Interface Modification by Hydrocarbon Gas Molecular Beams in Heteroepitaxy of SiC on Si
• Scanning Capacitance and Spreading Resistance Microscopy of SiC Multiple-pn-Junction Structure : Semiconductors
• Interface Properties of Metal-Oxide-Semiconductor Structures on 4H-SiC{0001} and (1120) Formed by N_2O Oxidation
• High-Temperature Deep Level Transient Spectroscopy on As-Grown P-Type 4H-SiC Epilayers
• Correspondence between Surface Morphological Faults and Crystallographic Defects in 4H-SiC Homoepitaxial Film
• Defect Formation in (0001)- and (1120)-Oriented 4H-SiC Crystals P^+-Implanted at Room Temperature
• Homoepitaxial Chemical Vapor Deposition of 6H-SiC at Low Temperatures on {011^^-4} Substrates
• Photoluminescence of Ti Doped 6H-SiC Grown by Vapor Phase Epitaxy
• Deep Interface States in SiO_2/p-type α-SiC Structure
• Improved Performance of 4H-SiC Double Reduced Surface Field Metal-Oxide-Semiconductor Field-Effect Transistors by Increasing RESURF Doses
• Selective Embedded Growth of 4H-SiC Trenches in 4H-SiC(0001) Substrates Using Carbon Mask
• Homoepitaxy of 4H-SiC on Trenched (0001) Si Face Substrates by Chemical Vapor Deposition
• Effect of C/Si Ratio on Spiral Growth on 6H-SiC (0001)
• High-Voltage 4H-SiC Schottky Barrier Diodes Fabricated on (033^^-8) with Closed Micropipes
• High-Sensitivity Analysis of Z_1 Center Concentration in 4H-SiC Grown by Horizontal Cold-Wall Chemical Vapor Deposition
• Surface Morphological Structures of 4H-, 6H- and 15R-SiC (0001) Epitaxial Layers Grown by Chemical Vapor Deposition
• Fast Epitaxial Growth of 4H-SiC by Chimney-Type Vertical Hot-Wall Chemical Vapor Deposition : Semiconductors
• High-Purity and Thick 4H- and 6H-SiC(0001) Epitaxial Growth by Cold-Wall Chemical Vapor Deposition and High-Voltage pin Diodes : Semiconductors
• Specular Surface Morphology of 4H-SiC Epilayers Grown on (112^^-0) Face
• Reduction of Deep Levels and Improvement of Carrier Lifetime in n-Type 4H-SiC by Thermal Oxidation
• Photoluminescence of 3C-SiC Epilayers Grown on Lattice-Matched Substrates
• Reduction of Double Positioning Twinning in 3C-SiC Grown on α-SiC Substrates
• Photoluminescence of Homoepitaxial 3C-SiC on Sublimation-Grown 3C-SiC Substrates
• Exciton-Related Photoluminescence in 4H-SiC Growm by Step-Controlled Epitaxy
• Step-Controlled Epitaxial Growth of 4H-SiC and Doping of Ga as a Blue Luminescent Center
• Anomalously Large Difference in Ga Incorporation for AlGaN Grown on the (1120) and (1100) Planes under Group-III-Rich Conditions
• Tunneling Current in a-Si:H/a-Si_C_x:H Multilayer Structures
• Effects of Channel Mobility on SiC Power Metal-Oxide-Semicomductor Field Effect Transistor Perforrmance
• ZrB_2 Substrate for Nitride Semiconductors
• Zirconium Diboride (0001) as an Electrically Conductive Lattice-Matched Substrate for Gallium Nitride
• Effects of Deposition Conditions on Properties of a-Si_C_x:H Diagnosed Using Optical Emission Spectroscopy
• Nitrogen Donor Concentrations and Its Energy Levels in 4H-SiC Uniquely Determined by a New Graphical Method Based on Hall-Effect Measurement
• Nitrogen Ion Implantation into 6H-SiC and Application to High-Temperature, Radiation-Hard Diodes
• Vanadium Ion Implanted Guard Rings for High-Voltage 4H-SiC Schottky Rectifiers
• Strain in GaP Films Heteroepitaxially Grown on Si by Metalorganic Chemical Vapor Deposition
• Heavily Sn-doped n-Type InGaP Grown by Metalorganic Chemical Vapor Deposition
• Heteroepitaxial Growth of InGaP on Si with InGaP/GaP Step-graded Buffer Layers
• Structure Analysis of A-Si_C_x:H with Dominant Tetrahedral Si-C Bonds Deposited by Hybrid-Plasma Chemical Vapor Deposition
• Time-Resolved Reflection High-Energy Electron Diffraction Analysis in Initial Stage of 3C-SiC Growth on Si(001) by Gas Source Molecular Beam Epitaxy
• Optimization of Silicon-Based 2-Terminal Tandem Solar Cells with GaAs_P_x and InGa_P_x as Top Cell Material
• Quantitative Analysis for CH_3 Radicals in Low-Temperature Growth of 3C-SiC on Si(001) Clean Surface
• Deposition Mechanisms of SiO_2 in Remote Plasma Chemical Vapor Deposition Analyzed by Spatially Resolved Mass Spectroscopy ( Plasma Processing)
• Single Crystalline Si Metal/Oxide/Semiconductor Field-Effect Transistors Using High-Quality Gate SiO_2 Deposited at 300℃ by Remote Plasma Technique
• Low-Temperature Deposition of Hydrogen-Free Silicon Oxynitride without Stress by the Remote Plasma Technique : Etching and Deposition Technology
• Low-Temperature Deposition of Hydrogen-Free Silicon Oxynitride without Stress by the Remote Plasma Technique
• Interface Electronic Properties between Silicon and Silicon Nitride Deposited by Direct Photochemical Vapor Deposition
• Impurity Doping and Electrical Properties of GaAsP Heteroepitaxially Grown on GaP and Si by Metalorganic Molecular Beam Epitaxy
• Lattice Distortion in GaAsP Heteroepitaxially Grown on GaP and Si by Metalorganic Molecular Beam Epitaxy
• Robust 4H-SiC pn Diodes Fabricated using (1120) Face
• High-quality Epitaxial Growth of SiC and State-of-the-art Device Development
• Recent Progress in Epitaxial Growth of SiC for Power Devices
• Structure Analysis of ZrB_2(0001) Surface Prepared by ex situ HF Treatment
• Effects of C/Si Ratio in Chemical Vapor Deposition of 4H-SiC(1120) and (0338)
• Increase of Leakage Current and Trap Density Caused by Bias Stress in Silicon Nitride Prepared by Photo-Chemical Vapor Deposition
• Discharging Current Transient Spectroscopy for Evaluating Traps in Insulators
• Electrical Properties of Silicon Nitride Films Prepared by Photo-Assisted Chemical Vapor Deposition under Controlled Decomposition of Ammonia
• Nonpolar 4H-Polytype AlN/AlGaN Multiple Quantum Well Structure Grown on 4H-SiC(1100)
• Growth of Luminescent GaAsP on Si Substrate by Metalorganic Molecular Beam Epitaxy Using GaP Buffer Layer
• GaAsP pn Diode on Si Substrate Grown by Metalorganic Molecular Beam Epitaxy for Visible Light-Emitting Devices
• High-Quaity AIN by Initia ayer-by-ayer Growth on Surface-Controed 4H-SIC(0001)Substrate
• Growth of AlN (112^^-0) on 6H-SiC (112^^-0) by Molecular-Beam Epitaxy : Semiconductors
• Determination of Minority-Carrier Lifetime in Multicrystalline Silicon Solar Cells using Current Transient Behaviors
• Characteristics of Silicon Inversion Layer Solar Cells : II-2: SILICON SOLAR CELLS (3)
• Fabrication of P-N Junction Diodes Using Homoepitaxially Grown 6H-SiC at Low Temperature by Chemical Vapor Deposition
• Origin of Etch Hillocks Formed on On-Axis SiC($000\bar{1}$) Surfaces by Molten KOH Etching
• Observation of Defects that Reduce Schottky Barrier Height in 4H-SiC Schottky Contacts Using Electrochemical Deposition of ZnO
• A Reproducible LPE Growth of High-Quality In_Ga_xP_As_y Layers on GaAs by the Control of Phosphorus Vapor on the Substrate
• Atomic-Layer Control in GaP Growth by Laser-Triggered Chemical Beam Epitaxy
• Transmission Electron Microscopic Study of the Surface and Interface of Carbonized-Layer/Si(100)
• Fundamental Properties of MIS Solar Cells Using Mg-p Si System : I-2: SINGLE CRYSTAL SILICON SOLAR CELLS
• SiO_2 Film Deposition by KrF Excimer Laser Irradiation
• Blue-Emitting Diodes of 6H-SiC Prepared by Chemical Vapor Deposition
• Deposition and Properties of Polycrystalline Si for Solar Cells : I-1: SILICON SOLAR CELLS (I)
• Optical Properties of β-SiC Crystals Prepared by Chemical Vapor Deposition
• Plasma Etching of CVD Grown Cubic SiC Single Crystals
• Metal-Oxide-Semiconductor Characteristics of Chemical Vapor Deposited Cubic-SiC
• Reduction of Threading Dislocation Density in 2H-AlN Grown on 6H-SiC(0001) by Minimizing Unintentional Active-Nitrogen Exposure before Growth
• Correlation between Oxygen Composition and Electrical Properties in NiO Thin Films for Resistive Random Access Memory
• Reliability of Nitrided Gate Oxides for N- and P-Type 4H-SiC(0001) Metal--Oxide--Semiconductor Devices
• Low Density of Gap States in a-Si:H Deposited by Vacuum UV Direct Photochemical Vapor Deposition Method
• Enhancement of Carrier Lifetimes in n-Type 4H-SiC Epitaxial Layers by Improved Surface Passivation
• Nondestructive Visualization of Individual Dislocations in 4H-SiC Epilayers by Micro Photoluminescence Mapping
• Influence of Effective Fixed Charges on Short-Channel Effects in SiC Metal–Oxide–Semiconductor Field-Effect Transistors
• Electrostatic-Actuated Suspended Ribbon Structure Fabricated in Single-Crystalline SiC by Selective Photoelectrochemical Etching
• In situ Gravimetric Monitoring of Thermal Decomposition and Hydrogen Etching Rates of 6H-SiC(0001) Si Face
• Nearly Ideal Current--Voltage Characteristics of Schottky Barrier Diodes Formed on Hydride-Vapor-Phase-Epitaxy-Grown GaN Free-Standing Substrates
• Robust 4H–SiC pn Diodes Fabricated using ($11\bar{2}0$) Face
• Surface Morphologies of 4H-SiC($11\bar{2}0$) and ($1\bar{1}00$) Treated by High-Temperature Gas Etching
• Improvement of Channel Mobility in Inversion-Type n-Channel GaN Metal–Oxide–Semiconductor Field-Effect Transistor by High-Temperature Annealing
• Low-Concentration Deep Traps in 4H-SiC Grown with High Growth Rate by Chemical Vapor Deposition
• Current Transport Characteristics of Quasi-AlxGa1-xN/SiC Heterojunction Bipolar Transistors with Various Band Discontinuities (Special Issue : Solid State Devices and Materials (2))
• Diffusion of Transition Metals in 4H-SiC and Trials of Impurity Gettering
• 4H-SiC pn Photodiodes with Temperature-Independent Photoresponse up to 300℃

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