Homoepitaxy of 4H-SiC on Trenched (0001) Si Face Substrates by Chemical Vapor Deposition

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-07-15

著者

• KIMOTO Tsunenobu

  Department of Electronic Science and Engineering, Kyoto University

• CHEN Yi

  Department of Chemistry, Nanjing University

• MATSUNAMI Hiroyuki

  Department of Electronic Science & Engineering, Kyoto University

• Malhan R

  Research Laboratories Denso Corp.

• TAKEUCHI Yuichi

  Research Laboratories, DENSO Corp.

• MALHAN Rajesh

  Research Laboratories, DENSO Corp.

• Chen Y

  Department Of Electronic Science And Engineering Kyoto University

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