Homoepitaxy of 4H-SiC on Trenched (0001) Si Face Substrates by Chemical Vapor Deposition
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-07-15
著者
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KIMOTO Tsunenobu
Department of Electronic Science and Engineering, Kyoto University
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CHEN Yi
Department of Chemistry, Nanjing University
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MATSUNAMI Hiroyuki
Department of Electronic Science & Engineering, Kyoto University
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Malhan R
Research Laboratories Denso Corp.
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TAKEUCHI Yuichi
Research Laboratories, DENSO Corp.
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MALHAN Rajesh
Research Laboratories, DENSO Corp.
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Chen Y
Department Of Electronic Science And Engineering Kyoto University
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