High-Quaity AIN by Initia ayer-by-ayer Growth on Surface-Controed 4H-SIC(0001)Substrate
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概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2003-05-01
著者
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SUDA Jun
Department of Electronic Science and Engineering, Kyoto University
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MATSUNAMI Hiroyuki
Department of Electronic Science & Engineering, Kyoto University
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Suda Jun
Department Of Electronics Science And Engineering Kyoto University
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ONOJIMA Norio
Department of Elecronic Science and Engineering, Kyoto University
関連論文
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