Growth of AlN (112^^-0) on 6H-SiC (112^^-0) by Molecular-Beam Epitaxy : Semiconductors

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2002-12-01

著者

• SUDA Jun

  Department of Electronic Science and Engineering, Kyoto University

• MATSUNAMI Hiroyuki

  Department of Electronic Science & Engineering, Kyoto University

• Suda Jun

  Department Of Electronics Science And Engineering Kyoto University

• ONOJIMA Norio

  Department of Elecronic Science and Engineering, Kyoto University

• Suda Jun

  Department Of Electrical Engineering Kushiro National College Of Technology

• Onojima N

  Department Of Electronic Science And Engineering Kyoto University

• Onojima Norio

  Department Of Elecronic Science And Engineering Kyoto University

• Matsunami Hiroyuki

  Department Of Electrical Engineering Kyoto University

• Matsunami Hiroyuki

  Department Of Eectrical Engineering Kyoto University

• Matsunami Hiroyuki

  Department of Electronic Science and Engineering, Kyoto University

関連論文

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• Scanning Capacitance and Spreading Resistance Microscopy of SiC Multiple-pn-Junction Structure : Semiconductors
• Interface Properties of Metal-Oxide-Semiconductor Structures on 4H-SiC{0001} and (1120) Formed by N_2O Oxidation
• Correspondence between Surface Morphological Faults and Crystallographic Defects in 4H-SiC Homoepitaxial Film
• Defect Formation in (0001)- and (1120)-Oriented 4H-SiC Crystals P^+-Implanted at Room Temperature
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