Structure Analysis of A-Si_<1-x>C_x:H with Dominant Tetrahedral Si-C Bonds Deposited by Hybrid-Plasma Chemical Vapor Deposition

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概要

• 論文の詳細を見る
• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 1997-01-01

著者

• Matsunami H

  Kyoto Univ. Kyoto Jpn

• MATSUNAMI Hiroyuki

  Department of Electronic Science & Engineering, Kyoto University

• FUYUKI Takashi

  Department of Electrical Engineering, Kyoto University

• Fuyuki Takashi

  Department Of Electronic Science And Engineering Faculty Of Engineering Kyoto University

• YOSHIMOTO Masahiro

  Department of Electrical Engineering, Kyoto University

• Yoshimoto Masahiro

  Department Of Electronic Science And Engineering Faculty Of Engineering Kyoto University

• Yoshimoto Masahiro

  Department Of Electronic Science And Engineering Kyoto University

• Yoshimoto Masahiro

  Department Of Electrical Engineering Kyoto University

• FUJII Tadashi

  Department of Electronic Science and Engineering, Faculty of Engineering, Kyoto University

• Yoshimoto M

  Materials And Structures Laboratory Tokyo Institute Of Technology

• Fuyuki T

  Nara Inst. Sci. And Technol. Nara Jpn

• Yoshimoto M

  Kyoto Inst. Technol. Kyoto Jpn

• Fuyuki Takashi

  Department Of Eectrical Engineering Kyoto University

• Matsunami Hiroyuki

  Department Of Electrical Engineering Kyoto University

• Fujii Tadashi

  Department Of Botany Faculty Of Science Tokyo University Of Education

• Matsunami Hiroyuki

  Department Of Eectrical Engineering Kyoto University

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• Hetero-Interface Properties of SiO_2/4H-SiC on Various Crystal Orientations(Heterostructure Microelectronics with TWHM2003)
• Fabrication of SiC lateral super junction diodes with multiple stacking p- and n-layers
• Interface properties in metal-oxide-semiconductor structures on n-type 4H-SiC(03(3)over-bar8)
• Avalanche phenomena in 4H-SiC p-n diodes fabricated by aluminum or boron implantation
• Shallow states at SiO2/4H-SiC interface on (11(2)over-bar-0) and (0001) faces
• Anisotropy in breakdown field of 4H-SiC
• High-energy (MeV) Al and B ion implantations into 4H-SiC and fabrication of pin diodes
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