Plasma Etching of CVD Grown Cubic SiC Single Crystals
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概要
- 論文の詳細を見る
Plasma etching of CVD grown cubic SiC single crystals with CF_4+O_2 mixture gas was investigated for the first time. The O_2 gas composition, rf power and pressure dependence of the etching rate were clarified. The maximum etching rate was obtained with the O_2 gas composition of 67%. The ratio of the etching rate between cubic SiC and Cr was found to be about 8.3, which indicates Cr as a good etching mask for cubic SiC.
- 社団法人応用物理学会の論文
- 1985-11-20
著者
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NISHINO Shigehiro
Department of Electronics and Information Science, Kyoto Institute of Technology
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MATSUNAMI Hiroyuki
Department of Electronic Science & Engineering, Kyoto University
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Nishino Shigehiro
Department Of Electrical Engineering Technical College Kyoto Institute Of Technology
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Nishino Shigehiro
Department Of Electrical Engineering Kyoto University
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Shibahara K
Research Center For Nanodevices And Systems Hiroshima University
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Nishino S
Kyoto Inst. Technol. Kyoto Jpn
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Matsunami Hiroyuki
Department Of Electrical Engineering Kyoto University
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SHIBAHARA Kentaro
Department of Electrical Engineering, Kyoto University
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Dohmae Shinichi
Department of Electrical Engineering, Kyoto University
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Shibahara K
Hiroshima Univ. Higashihiroshima‐shi Jpn
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Dohmae S
Kyoto Univ.
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Matsunami Hiroyuki
Department Of Eectrical Engineering Kyoto University
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