Spectroscopic Ellipsometry of 3C-SiC Thin Films Grown on Si Substrates Using Organosilane Sources

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概要

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• Dielectric function spectra of 3C-SiC films on Si substrates in the energy region of 0.73–6.43 eV were measured by spectroscopic ellipsometry. Hexamethyldisilane (Si2(CH3)6) and tetraethylsilane (Si(C2H5)4) were used as safe organosilane sources for the growth of SiC films. The measured spectra were compared with those of 3C-SiC on a Si(001) substrate grown with disilane (Si2H6). First, the pseudodielectric function spectra gave a shoulder structure corresponding to the direct $X_{5}$–$X_{1}$ interband transition in the Brillouin zone. Secondly, the dielectric function of 3C-SiC was determined by applying a four-layer model in which we took into account the surface roughness and mixed crystals of a carbonized interface layer. Finally, the third-derivative lineshape of the imaginary part $\varepsilon_{2}$ of the complex-dielectric function provided the values of the interband transition energy $E_{\text{g}}$ and the broadening parameter $\Gamma$ for the $X_{5}$–$X_{1}$ interband transition. The measured values of $\Gamma$ indicated that the crystalline quality of SiC films grown using organosilane sources is comparable to that of SiC films grown using Si2H6.

• 2005-06-15

著者

• Nishino Shigehiro

  Department Of Electrical Engineering Kyoto University

• Kubo Naoki

  Department Of Electronic And Control Systems Engineering Shimane University

• ASAHINA Shuichi

  Shimane Institute for Industrial Technology

• KANAYAMA Nobuyuki

  Shimane Institute for Industrial Technology

• Kitahara Kuninori

  Department Of Electronic And Control System Eng. Shimane University

• Moritani Akihiro

  Department Of Electronic And Control System Eng. Shimane University

• Moritani Akihiro

  Department of Electronic and Control Systems Engineering, Shimane University, 1060 Nishi-Kawatsu, Matsue 690-8504, Japan

• Tsutsumi Koichi

  J.A. Woollam Japan Corporation, 22-9 Ogikubo 5-chome, Suginami-ku, Tokyo 167-0051, Japan

• Suzuki Michio

  J.A. Woollam Japan Corporation, 22-9 Ogikubo 5-chome, Suginami-ku, Tokyo 167-0051, Japan

• Kitahara Kuninori

  Department of Electronic and Control Systems Engineering, Shimane University, 1060 Nishi-Kawatsu, Matsue 690-8504, Japan

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