Preparation of Stable F-Doped SiO 2 Thin Films from Si(NCO) 4/SiF 4/O 2 Gas Mixtures Using a Conventional Capacitively Coupled RF Plasma Source
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概要
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Stable F-doped SiO2 (SiOF) films have been deposited using a simple conventional capacitively coupled RF plasma-enhanced chemical vapor deposition method using H-free tetraisocyanatesilane (Si(NCO)4: TICS) diluted with oxygen, and tetrafluorosilane (SiF4) having Si–F bonds in itself. The SiO2 films deposited only with TICS have poor water resistivity, which originates in the inclusion of the SiNCO structure in the films. This property has been improved by mixing O2 with the source gases. Although F atoms at the top surface of films desorbed upon air exposure, SiOF films deposited with TICS, SiF4 and O2 exhibit excellent water resistivity. A film with F concentration of 6 at.% exhibited a dielectric constant of 3.3, a resistivity of 3.6×1015 Ωcm and a break-down electric field of 7.7 MV/cm. These values are comparable to or better than the reported values for films prepared using tetraethylorthosilicate. These results indicate that the TICS, SiF4 and O2 system can be used to deposit high quality SiOF films using a much simpler method than those requiring complex high density plasma sources.
- 1997-07-30
著者
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Hayashi Yasuaki
Department Of Electronics And Information Science Kyoto Institute Of Technology
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Nishino Shigehiro
Department Of Electrical Engineering Kyoto University
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Sawada Mahito
Department Of Electronics And Information Science Kyoto Institute Of Technology
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Nakagami Yuko
Department Of Electronics And Information Science Kyoto Institute Of Technology
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Shirafuji Tatsuru
Department Of Electrical Engineering Kyoto University
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Hayashi Yasuaki
Department of Electronics and Information Science, Kyoto Institute of Technology,
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Shirafuji Tatsuru
Department of Electronics and Information Science, Kyoto Institute of Technology,
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Sawada Mahito
Department of Electronics and Information Science, Kyoto Institute of Technology,
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