NISHINO Shigehiro | Department of Electronics and Information Science, Kyoto Institute of Technology

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概要

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著作論文

Analyses of Early Stages of Vertically Aligned Carbon Nanotube Growth by Plasma-Enhanced Chemical Vapor Deposition
Gas Phase Syntheses of Single-Walled Carbon Nanotubes by Chemical Vapor Deposition Using Hot filament and Plasma
Deep Level Study in Heteroepitaxial 3C-SiC Grown on Si by Hexamethyldisilane : Electrical Properties of Condensed Matter
Determination of Donor Densities and Donor Levels in 3C-SiC Grown from Si_2(CH_3)_6 Using Hall-Effect Measurements
Reduction of Hollow Defects in 6H-SiC Single Crystals Grown by Sublimation Boule Growth Technique on (1120) 6H-SiC Substrates
Thermal Etching of 6H-SiC Substrate Surface
Spectroscopic Ellipsometry of 3C-SiC Thin Films Grown on Si Substrates Using Organosilane Sources
Fabrication of P-N Junction Diodes Using Homoepitaxially Grown 6H-SiC at Low Temperature by Chemical Vapor Deposition
Bias-enhanced Nucleation of Oriented Diamond on Singlecrystalline 6H-SiC Substrates
Diamond Nucleation on Singlecrystalline 6H-SiC Substrates by Bias-Enhanced Nucleation in Hot Filament Chemical Vapor Deposition
Fundamental Properties of MIS Solar Cells Using Mg-p Si System : I-2: SINGLE CRYSTAL SILICON SOLAR CELLS
SiO_2 Film Deposition by KrF Excimer Laser Irradiation
Large-Scale Synthesis of Aligned Carbon Nanotubes by Surface-Wave-Excited Microwave-Plasma-Enhanced Chemical Vapor Deposition : Surfaces, Interfaces, and Fiims
Simple Hexagonal Coulomb Crystal near a Deformed Plasma Sheath Boundary in a Dusty Plasma
Blue-Emitting Diodes of 6H-SiC Prepared by Chemical Vapor Deposition
Deposition and Properties of Polycrystalline Si for Solar Cells : I-1: SILICON SOLAR CELLS (I)
Optical Properties of β-SiC Crystals Prepared by Chemical Vapor Deposition
Selective Epitaxial Growth of Silicon Carbide on Silicon using HMDS
Effect of Tantalum in Crystal Growth of Silicon Carbide by Sublimation Close Space Technique : Semiconductors
Ellipsometric Monitoring of First Stages of Diamond Nucleation in a Bias-Enhanced Surface-Wave-Excited Microwave Plasma
Plasma Copolymerization of Tetratluoroethylene/Hexamethyldisiloxane and In Situ Fourier Transform Infrared Spectroscopy of Its Gas Phase
Plasma Etching of CVD Grown Cubic SiC Single Crystals
Metal-Oxide-Semiconductor Characteristics of Chemical Vapor Deposited Cubic-SiC

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