Reduction of Hollow Defects in 6H-SiC Single Crystals Grown by Sublimation Boule Growth Technique on (1120) 6H-SiC Substrates
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-04-15
著者
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NISHINO Shigehiro
Department of Electronics and Information Science, Kyoto Institute of Technology
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OHSHIMA Satoru
Department of Cardiology, Nagoya University Graduate School of Medicine
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Nishino Shigehiro
Department Of Electronics And Information Science Kyoto Institute Of Technology
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MASUDA Yasuichi
Department of Electronics and Information Science, Kyoto Institute of Technology
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Masuda Y
Department Of Electronics And Information Science Kyoto Institute Of Technology
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NISHIGUCHI Taro
Department of Electronics and Information Science, Kyoto Institute of Technology
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Nishiguchi Taro
Department Of Electronics And Information Science Kyoto Institute Of Technology
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