Fundamental Properties of MIS Solar Cells Using Mg-p Si System : I-2: SINGLE CRYSTAL SILICON SOLAR CELLS
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1981-06-01
著者
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NISHINO Shigehiro
Department of Electronics and Information Science, Kyoto Institute of Technology
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MATSUNAMI Hiroyuki
Department of Electronic Science & Engineering, Kyoto University
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MATSUURA Hideharu
Department of Electronics, Osaka Electro-Communication University
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Nishino Shigehiro
Department Of Electronics Kyoto University
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Nishino Shigehiro
Department Of Electrical Engineering Kyoto University
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Matsunami Hiroyuki
Department Of Electrical Engineering Kyoto University
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Matsunami Hiroyuki
Department Of Eectrical Engineering Kyoto University
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Matsuura Hideharu
Department Of Electronic Engineering And Computer Science Osaka Electro-communication University
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Matsuura Hideharu
Department Of Electronics Kyoto University
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- High Channel Mobility in Inversion Layer of SiC MOSFETs for Power Switching Transistors
- High Channel Mobility in Inversion Layer of SiC MOSFETs for Power Switching Transistors
- Cracking of Saturated Hydrocarbon Gas Molecular Beam for Carbonization of Si(001) Surface
- Undoped Silicon Layers Grown by Gas Source Molecular Beam Epitaxy Using Si_2H_6
- Interface Modification by Hydrocarbon Gas Molecular Beams in Heteroepitaxy of SiC on Si
- Scanning Capacitance and Spreading Resistance Microscopy of SiC Multiple-pn-Junction Structure : Semiconductors
- Interface Properties of Metal-Oxide-Semiconductor Structures on 4H-SiC{0001} and (1120) Formed by N_2O Oxidation
- Correspondence between Surface Morphological Faults and Crystallographic Defects in 4H-SiC Homoepitaxial Film
- Defect Formation in (0001)- and (1120)-Oriented 4H-SiC Crystals P^+-Implanted at Room Temperature
- Homoepitaxial Chemical Vapor Deposition of 6H-SiC at Low Temperatures on {011^^-4} Substrates
- Photoluminescence of Ti Doped 6H-SiC Grown by Vapor Phase Epitaxy
- Deep Interface States in SiO_2/p-type α-SiC Structure
- Selective Embedded Growth of 4H-SiC Trenches in 4H-SiC(0001) Substrates Using Carbon Mask
- Homoepitaxy of 4H-SiC on Trenched (0001) Si Face Substrates by Chemical Vapor Deposition
- Effect of C/Si Ratio on Spiral Growth on 6H-SiC (0001)
- High-Voltage 4H-SiC Schottky Barrier Diodes Fabricated on (033^^-8) with Closed Micropipes
- High-Sensitivity Analysis of Z_1 Center Concentration in 4H-SiC Grown by Horizontal Cold-Wall Chemical Vapor Deposition
- Surface Morphological Structures of 4H-, 6H- and 15R-SiC (0001) Epitaxial Layers Grown by Chemical Vapor Deposition
- Fast Epitaxial Growth of 4H-SiC by Chimney-Type Vertical Hot-Wall Chemical Vapor Deposition : Semiconductors
- High-Purity and Thick 4H- and 6H-SiC(0001) Epitaxial Growth by Cold-Wall Chemical Vapor Deposition and High-Voltage pin Diodes : Semiconductors
- Specular Surface Morphology of 4H-SiC Epilayers Grown on (112^^-0) Face
- Photoluminescence of 3C-SiC Epilayers Grown on Lattice-Matched Substrates
- Reduction of Double Positioning Twinning in 3C-SiC Grown on α-SiC Substrates
- Photoluminescence of Homoepitaxial 3C-SiC on Sublimation-Grown 3C-SiC Substrates
- Exciton-Related Photoluminescence in 4H-SiC Growm by Step-Controlled Epitaxy
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- Vanadium Ion Implanted Guard Rings for High-Voltage 4H-SiC Schottky Rectifiers
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- High-quality Epitaxial Growth of SiC and State-of-the-art Device Development
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- Thermal Etching of 6H-SiC Substrate Surface
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- Discharging Current Transient Spectroscopy for Evaluating Traps in Insulators
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- Acceptor Densities and Acceptor Levels in Undoped GaSb Determined by Free Carrier Concentration Spectroscopy
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