A New Structure of an N-Channel Junction Field-Effect Transistor Embedded in a Pin Diode for an X-Ray Detector
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概要
- 論文の詳細を見る
A new structure of an n-channel junction field-effect transistor (n-channel JFET) embedded in a pin diode for an X-ray detector is proposed. When a p/n junction, which is formed on the n^- substrate (i. e., i layer) of the pin diode around the JFET, is reverse-biased, the depletion region is extended under the n channel of the JFET, because the donor density of the n^- substrate is as low as 2×10^<12>cm^<-3>. This indicates that the n channel can be electrically separated from the n^- substrate, without a p region under the n channel. Since it is unnecessary to form the p region under the n channel, only one type of donor exists in the n channel of the JFET proposed here, suggesting that this n-channel JFET has the advantage of high performance due to high mobility and a low noise characteristic due to low defect densities.
- 社団法人応用物理学会の論文
- 1998-02-01
著者
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Nishida Katsuhiko
Eniwa Research And Development Center Kyoto Semiconductor Corporation
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MATSUURA Hideharu
Department of Electronics, Osaka Electro-Communication University
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Matsuura Hideharu
Department Of Electronic Engineering And Computer Science Osaka Electro-communication University
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